GBJ810 datasheet, PDF - EEWORLD Datasheet

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GBJ810: Description8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size64KB，2 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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GBJ810 Overview

8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

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MCC

Features

omponents

21201 Itasca Street Chatsworth

!"#

$ % !"#

GBJ8005

THRU

GBJ810

8 Amp

Glass Passivated

Bridge Rectifier

50 to 1000 Volts

GBJ

Rating to 1000V PRV

Ideal for printed circuit board

Low forward voltage drop, high current capability.

Reliable low cost construction utilizing molded plastic

technique results in inexpensive product

Maximum Ratings

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

MCC

Catalog

Number

GBJ8005

GBJ801

GBJ802

GBJ804

GBJ806

GBJ808

GBJ810

Device

Marking

Maximum

Reccurrent

Peak Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

RMS

Voltage

35V

70V

140V

280V

420V

560V

700V

Maximum

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

---

DIMENSIONS

INCHES

MIN

1.170

.780

.670

.019

.430

.090

.120

.130

.170

.100

.020

.080

.040

.390

.290

.150

MIN

29.70

19.70

17.00

4.70

10.80

2.30

3.10

3.40

4.40

2.50

0.60

2.00

0.90

9.80

7.30

3.80

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

F(AV)

Tc = 110°C

Current

Peak Forward Surge

FSM

170A

8.3ms, half sine

Current

Maximum

= 4.0A

1.0V

Instantaneous

Forward Voltage

= 25°C

Maximum DC

Reverse Current At

5 µA

= 25°C

Rated DC Blocking

500uA T

= 125°C

Voltage

Typical thermal

resistance

OJC

1.6

°C

Typical Junction

55 pF

Measured at

Capacitance

1.0MHz, V

=4.0V

*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%

DIM

MAX

1.190

.800

.710

.019

.440

.110

.130

.150

.190

.110

.030

.090

.040

.400

.300

.170

MAX

30.30

20.30

18.00

4.90

11.20

2.70

3.40

3.80

4.80

2.90

0.80

2.40

1.10

10.20

7.70

4.20

NOTE

www.mccsemi.com

GBJ810 Related Products

	GBJ810	GBJ8005	GBJ801	GBJ802	GBJ804	GBJ806	GBJ808
Description	8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	2.9 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

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