2N3998
Silicon NPN Transistor
Data Sheet
Description
S
EMICOA Corporation
offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N3998J)
•
JANTX level (2N3998JX)
•
JANTXV level (2N3998JV)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
•
Radiation testing (total dose) upon request
Applications
•
High-speed power switching
•
Power transistor
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed TO-x metal can
Also available in chip configuration
Chip geometry 9201
Reference document:
MIL-PRF-19500/374
Benefits
Please contact S
EMICOA
for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX, and
JANTXV
•
Radiation testing available
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Power Dissipation, T
C
= 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
C
= 25°C unless otherwise specified
Rating
80
100
8
5
2
11.4
30
300
3.33
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
A
W
mW/°C
W
mW/°C
°C/W
°C
°C
R
θJC
T
J
T
STG
Copyright 20
10
Rev. D
S
EMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3998
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Symbol
|h
FE
|
C
OBO
Test Conditions
I
C
= 50 mA, V
CE
= 2 Volts
I
C
= 1 A, V
CE
= 2 Volts
I
C
= 5 A, V
CE
= 5 Volts
I
C
= 1 A, V
CE
= 2 Volts
T
A
= -55°C
I
C
= 1 A, I
B
= 100 mA
I
C
= 5 A, I
B
= 500 mA
I
C
= 1 A, I
B
= 100 mA
I
C
= 5 A, I
B
= 500 mA
Test Conditions
V
CE
= 5 Volts, I
C
= 1 A,
f = 10 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
Test Conditions
Symbol
V
(BR)CBO
V
(BR)CEO
I
CEO
I
CES1
I
CES1
I
EBO1
I
EBO2
Test Conditions
I
C
= 10
µA
I
C
= 50 mA
V
CE
= 60 Volts
V
CE
= 80 Volts
V
CE
= 80 Volts, T
A
= 150°C
V
EB
= 5 Volts
V
EB
= 8 Volts
Min
100
80
10
200
50
200
10
Typ
Max
Units
Volts
Volts
µA
nA
µA
nA
µA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
30
40
15
10
0.6
Typ
Max
120
Units
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Switching Characteristics
Parameter
Delay Time
Rise Time
Storage Time
Fall Time
Saturated Turn-On Time
Saturated Turn-Off Time
1.2
1.6
0.25
2
Typ
Max
12
150
Volts
Volts
Min
3
Units
pF
Symbol
t
d
t
r
t
s
t
f
t
ON
t
OFF
Min
Typ
Max
100
240
1.4
300
300
1.5
Units
ns
ns
µs
ns
ns
µs
Copyright 20
10
Rev. D
S
EMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com