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2N3998JX

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL CAN PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size483KB,2 Pages
ManufacturerSemicoa
Websitehttp://www.snscorp.com/Semicoa.htm
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2N3998JX Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL CAN PACKAGE-3

2N3998JX Parametric

Parameter NameAttribute value
package instructionHERMETIC SEALED, METAL CAN PACKAGE-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeO-MUPM-X3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500/374
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2N3998
Silicon NPN Transistor
Data Sheet
Description
S
EMICOA Corporation
offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3998J)
JANTX level (2N3998JX)
JANTXV level (2N3998JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Applications
High-speed power switching
Power transistor
NPN silicon transistor
Features
Hermetically sealed TO-x metal can
Also available in chip configuration
Chip geometry 9201
Reference document:
MIL-PRF-19500/374
Benefits
Please contact S
EMICOA
for special configurations
www.SEMICOA.com or (714) 979-1900
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Power Dissipation, T
C
= 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
C
= 25°C unless otherwise specified
Rating
80
100
8
5
2
11.4
30
300
3.33
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
A
W
mW/°C
W
mW/°C
°C/W
°C
°C
R
θJC
T
J
T
STG
Copyright 20
10
Rev. D
S
EMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com

2N3998JX Related Products

2N3998JX 2N3998J 2N3998JV
Description Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL CAN PACKAGE-3 Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL CAN PACKAGE-3 Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL CAN PACKAGE-3
package instruction HERMETIC SEALED, METAL CAN PACKAGE-3 HERMETIC SEALED, METAL CAN PACKAGE-3 HERMETIC SEALED, METAL CAN PACKAGE-3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 5 A 5 A 5 A
Collector-emitter maximum voltage 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 15 15
JESD-30 code O-MUPM-X3 O-MUPM-X3 O-MUPM-X3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
Guideline MIL-19500/374 MIL-19500/374 MIL-19500/374
surface mount NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1

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