d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-1878-Rev. C, 17-Aug-15
Document Number: 67050
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ7414AEN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward
Transconductance
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
Time
c
t
d(off)
t
f
I
SM
V
SD
I
F
= 3.6 A, V
GS
= 0 V
V
DD
= 30 V, R
L
= 30
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
GS
= 10 V
V
DS
= 30 V, I
D
= 8.7 A
V
GS
= 0 V
V
DS
= 30 V, f = 1 MHz
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay
Fall Time
c
Pulsed Current
a
Forward Voltage
-
-
-
-
-
-
0.4
-
-
-
-
-
-
784
142
57
16
2.5
3.3
-
9
9
20
10
-
0.8
980
178
71
24
-
-
1.8
14
14
29
15
72
1.2
A
V
ns
Ω
nC
pF
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= 5.7 A
I
D
= 5.7 A, T
J
= 125 °C
I
D
= 5.7 A, T
J
= 175 °C
I
D
= 4.9 A
60
1.5
-
-
-
-
20
-
-
-
-
-
-
2
-
-
-
-
-
0.022
-
-
0.030
20
-
2.5
± 100
1
50
150
-
0.026
0.042
0.053
0.036
-
S
Ω
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 5.7 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1878-Rev. C, 17-Aug-15
Document Number: 67050
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ7414AEN
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
30
Vishay Siliconix
24
I
D
- Drain Current (A)
V
GS
= 10 V thru 4 V
I
D
- Drain Current (A)
24
18
18
T
C
= 25
°C
12
12
V
GS
= 3 V
6
6
T
C
= 125
°C
T
C
= -55 °C
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
0
Output Characteristics
10
50
Transfer Characteristics
8
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
40
T
C
= 25
°C
T
C
= -55 °C
6
T
C
= 25
°C
4
30
20
T
C
= 125
°C
10
2
T
C
= 125
°C
T
C
= -55 °C
0
0
5
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
0
3
6
9
12
15
I
D
- Drain Current (A)
Transfer Characteristics
0.05
1500
Transconductance
0.04
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
0.03
C - Capacitance (pF)
1200
900
C
iss
0.02
V
GS
= 10 V
0.01
600
300
C
oss
C
rss
0
12
24
36
48
60
0.00
0
4
8
12
16
20
I
D
- Drain Current (A)
0
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
S15-1878-Rev. C, 17-Aug-15
Capacitance
Document Number: 67050
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ7414AEN
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 8.7 A
V
DS
= 30 V
2.5
I
D
= 5.7 A
2.1
V
GS
= 10 V
Vishay Siliconix
V
GS
-
Gate-to-Source
Voltage (V)
8
6
1.7
4
1.3
V
GS
= 4.5 V
2
0.9
0
0
3
6
10
13
16
Q
g
- Total
Gate
Charge (nC)
0.5
-50
-25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.15
10
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
T
J
= 150
°C
1
0.12
0.09
0.1
T
J
= 25
°C
0.01
0.06
T
J
= 150 °C
0.03
T
J
= 25 °C
0.001
0.0
0.3
0.6
0.9
1.2
V
SD
-
Source-to-Drain
Voltage (V)
1.5
0.00
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source Drain Diode Forward Voltage
75
On-Resistance vs. Gate-to-Source Voltage
0.5
V
DS
- Drain-to-Source Voltage (V)
0.2
V
GS(th)
Variance (V)
72
I
D
= 1 mA
-0.1
I
D
= 5 mA
-0.4
I
D
= 250 μA
-0.7
69
66
63
-1.0
-50
-25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
60
-50
-25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Threshold Voltage
S15-1878-Rev. C, 17-Aug-15
Drain Source Breakdown vs. Junction Temperature
Document Number: 67050
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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