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ARS35J

Description
Rectifiers 35A,600V,High Crnt SILASTIC Rect
CategoryDiscrete semiconductor    diode   
File Size372KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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ARS35J Overview

Rectifiers 35A,600V,High Crnt SILASTIC Rect

ARS35J Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-PEDB-N2
Reach Compliance Codecompliant
Other featuresLOW LEAKAGE CURRENT
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PEDB-N2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-50 °C
Maximum output current35 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time3 µs
surface mountYES
Terminal surfacePURE TIN
Terminal formNO LEAD
Terminal locationEND

ARS35J Related Products

ARS35J ARS35G ARS35K
Description Rectifiers 35A,600V,High Crnt SILASTIC Rect Rectifiers 35A,400V,High Crnt SILASTIC Rect Rectifiers 1500W 20V 5% UNI TRANSZORB-TVS
Is it Rohs certified? conform to conform to conform to
package instruction O-PEDB-N2 O-PEDB-N2 O-PEDB-N2
Reach Compliance Code compliant compliant compliant
Other features LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V
JESD-30 code O-PEDB-N2 O-PEDB-N2 O-PEDB-N2
Humidity sensitivity level 1 1 1
Maximum non-repetitive peak forward current 500 A 500 A 500 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C
Minimum operating temperature -50 °C -50 °C -50 °C
Maximum output current 35 A 35 A 35 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 400 V 800 V
Maximum reverse recovery time 3 µs 3 µs 3 µs
surface mount YES YES YES
Terminal surface PURE TIN Pure Tin (Sn) PURE TIN
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location END END END
Maker Taiwan Semiconductor - Taiwan Semiconductor
JESD-609 code e3 - e3
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