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BCW67BE6327HTSA1

Description
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size524KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BCW67BE6327HTSA1 Overview

Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

BCW67BE6327HTSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1

BCW67BE6327HTSA1 Related Products

BCW67BE6327HTSA1 BCW67CE6327HTSA1
Description Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR Bipolar Transistors - BJT AF TRANSISTORS
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 4 weeks 1 week
Maximum collector current (IC) 0.8 A 0.8 A
Collector-emitter maximum voltage 32 V 32 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 60 100
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
Base Number Matches 1 1
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