PD - 94605
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level
IRHMS597260 100K Rads (Si)
IRHMS593260 300K Rads (Si)
R
DS(on)
0.103Ω
0.103Ω
I
D
-32A
-32A
IRHMS597260
200V, P-CHANNEL
4
#
TECHNOLOGY
c
Low-Ohmic
TO-254AA
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
High Electrical Conductive Package
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
➀
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-32
-20
-128
208
1.67
±20
354
-32
25
-4.1
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in./1.6mm from case for 10s)
9.3 ( Typical )
g
For footnotes refer to the last page
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1
02/13/03
IRHMS597260
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-200
—
—
-2.0
23
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
-0.25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.103
-4.0
—
-10
-25
-100
100
175
75
70
35
50
75
100
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -20A
➃
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -20A
➃
VDS= -160V ,VGS=0V
VDS = -160V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -32A
VDS = -100V
VDD = -100V, ID = -32A
VGS =-12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7170
920
86
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-32
-128
-5.0
300
6.0
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = -32A, VGS = 0V
➃
Tj = 25°C, IF =-32A, di/dt
≤
-100A/µs
VDD
≤
-50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
0.21
—
0.6
—
48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMS597260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
100K Rads(Si)
1
Min Max
—
-4.0
-100
100
-10
0.103
0.103
-5.0
300KRads(Si)
2
Min
Max
-200
-2.0
—
—
—
—
—
—
—
-5.0
-100
100
-10
0.103
0.103
-5.0
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=-20V
V
GS
= 20 V
V
DS
= -160V, V
GS
=0V
V
GS
= -12V, I
D
=-20A
V
GS
= -12V, I
D
=-20A
V
GS
= 0V, IS = -32A
Drain-to-Source Breakdown Voltage
-200
Gate Threshold Voltage
-2.0
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Zero Gate Voltage Drain Current
—
Static Drain-to-Source
➃
—
On-State Resistance (TO-3)
Static Drain-to-Source On-State
➃
—
Resistance(Low-OhmicTO-254AA)
Diode Forward Voltage
➃
—
1. Part number IRHMS597260
2. Part number IRHMS593260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm
2
))
37.3
59.9
82.3
Energy
(MeV)
285
345
357
VDS (V)
Range
(µm)
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
36.8
- 200
- 200
- 200
- 200
-75
32.7
- 200
- 200
- 200
- 50
—
28.5
- 200
- 200
- 200
- 35
—
-250
-200
VDS
-150
-100
-50
0
0
5
10
VGS
15
20
Br
I
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS597260
Pre-Irradiation
1000
-I D , Drain-to-Source Current (A)
100
-5.0V
-I D , Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
1000
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
- 6.0V
BOTTOM -5.0V
TOP
-5.0V
10
10
20
µ
s PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
20
µ
s PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -32A
-I D , Drain-to-Source Current (
Α
)
2.0
100
T J = 25°C
T J = 150°C
1.5
1.0
VDS = -50V
20
µ
s PULSE WIDTH
15
10
5
5.5
6
6.5
7
7.5
8
-V GS, Gate-to-Source Voltage (V)
0.5
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHMS597260
12000
VGS = 0V, f = 1 MHZ
Ciss = C + C , C SHORTED
gs gd ds
16
ID= -32A
-V GS, Gate-to-Source Voltage (V)
10000
Crss = C
gd
Coss = C + Cgd
ds
VDS= -160V
VDS= -100V
VDS= -40V
C, Capacitance (pF)
12
8000
Ciss
6000
8
4000
Coss
4
2000
Crss
0
1
10
100
0
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
-ISD , Reverse Drain Current (
Α
)
100
T J = 150°C
10
TJ = 25°C
1
-I D , Drain-to-Source Current (A)
100
100µs
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
0.1
0.5
1.5
2.5
3.5
4.5
VGS = 0V
5.5
6.5
10ms
1000
1
-VSD , Source-to-Drain Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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