Freescale Semiconductor
Technical Data
Document Number: MMG3009NT1
Rev. 7, 9/2014
Broadband High Linearity Amplifier
The MMG3009NT1 is a general purpose amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small--signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as cellular,
PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--
signal RF.
Features
Frequency: 0 to 6000 MHz
P1dB: 18 dBm @ 900 MHz
Small--Signal Gain: 15 dB @ 900 MHz
Third Order Output Intercept Point: 34 dBm @ 900 MHz
Single 5 V Supply
Internally Matched to 50 Ohms
Cost--effective SOT--89 Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
MMG3009NT1
0-
-6000 MHz, 15 dB
18 dBm
InGaP HBT GPA
SOT-
-89
Table 1. Typical Performance
(1)
Characteristic
Symbol
G
p
IRL
ORL
P1dB
OIP3
900
MHz
15
--13
--17
18
34
2140
MHz
14
--26
--15
18
32
3500
MHz
12.5
--22
--24
17.5
31
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Symbol
V
CC
I
CC
P
in
T
stg
T
J
Value
7
300
10
--65 to +150
150
Unit
V
mA
dBm
C
C
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
1. V
CC
= 5 Vdc, T
A
= 25C, 50 ohm system.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 88C, 5 Vdc, 70 mA, no RF applied
Symbol
R
JC
Value
(2)
81
Unit
C/W
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2005--2008, 2012, 2014. All rights reserved.
MMG3009NT1
1
RF Device Data
Freescale Semiconductor, Inc.
LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15
Heterojunction Bipolar Transistor
(InGaP HBT)
LIFETIME BUY
Table 4. Electrical Characteristics
(V
CC
= 5 Vdc, 900 MHz, T
A
= 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
Supply Current
Supply Voltage
Symbol
G
p
IRL
ORL
P1dB
OIP3
NF
I
CC
V
CC
Min
14.3
—
—
—
—
—
58
—
Typ
15
--13
--17
18
34
4.2
70
5
Max
—
—
—
—
—
—
82
—
Unit
dB
dB
dB
dBm
dBm
dB
mA
V
Table 5. Functional Pin Description
Pin
Number
1
RF
in
Ground
RF
out
/DC Supply
1
2
3
2
3
Pin Function
2
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
1A
A
IV
Human Body Model (per JESD 22--A114)
Machine Model (per EIA/JESD 22--A115)
Charge Device Model (per JESD 22--C101)
Table 7. Moisture Sensitivity Level
Test Methodology
Rating
1
Package Peak Temperature
260
Unit
C
Per JESD 22--A113, IPC/JEDEC J--STD--020
MMG3009NT1
2
RF Device Data
Freescale Semiconductor, Inc.
LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15
LIFETIME BUY
50 OHM TYPICAL CHARACTERISTICS
20
G
p
, SMALL--SIGNAL GAIN (dB)
T
C
= 85C
15
--40C
25C
S11, S22 (dB)
0
--10
S11
--20
S22
--30
10
V
CC
= 5 Vdc
5
0
1
2
f, FREQUENCY (GHz)
3
4
V
CC
= 5 Vdc
--40
0
1
2
f, FREQUENCY (GHz)
3
4
Figure 2. Small-
-Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
21
P1dB, 1 dB COMPRESSION POINT (dBm)
19
17
15
13
11
9
7
10
12
14
16
P
out
, OUTPUT POWER (dBm)
V
CC
= 5 Vdc
18
20
3500 MHz
2600 MHz
900 MHz
1960 MHz
2140 MHz
20
19
18
17
16
15
14
13
0.5
1
1.5
2
2.5
f, FREQUENCY (GHz)
V
CC
= 5 Vdc
3
3.5
Figure 4. Small-
-Signal Gain versus Output
Power
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
100
80
60
40
20
0
4
4.2
4.4
4.6
4.8
5
5.2
5.4
V
CC
, COLLECTOR VOLTAGE (V)
36
33
30
27
24
21
0
Figure 5. P1dB versus Frequency
V
CC
= 5 Vdc
1 MHz Tone Spacing
1
2
f, FREQUENCY (GHz)
3
4
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3009NT1
RF Device Data
Freescale Semiconductor, Inc.
3
LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15
I
CC
, COLLECTOR CURRENT (mA)
LIFETIME BUY
G
p
, SMALL--SIGNAL GAIN (dB)
50 OHM TYPICAL CHARACTERISTICS
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
36
33
30
27
24
21
4.9
4.95
5
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
35
34
33
32
31
30
29
28
--40
V
CC
= 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
--20
0
20
40
60
80
f = 900 MHz
1 MHz Tone Spacing
5.05
5.1
100
V
CC
, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
LIFETIME BUY
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
10
5
Figure 9. Third Order Output Intercept Point
versus Case Temperature
--30
--40
--50
--60
--70
--80
0
3
6
9
12
15
P
out
, OUTPUT POWER (dBm)
V
CC
= 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
MTTF (YEARS)
10
4
10
3
120
125
130
135
140
145
150
T
J
, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with V
CC
= 5 Vdc, I
CC
= 70 mA
Figure 10. Third Order Intermodulation Distortion
versus Output Power
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
--20
--30
--40
--50
--60
--70
2
4
6
8
10
12
14
16
P
out
, OUTPUT POWER (dBm)
8
NF, NOISE FIGURE (dB)
6
V
CC
= 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
4
2
V
CC
= 5 Vdc
0
0
1
2
f, FREQUENCY (GHz)
3
4
Figure 12. Noise Figure versus Frequency
MMG3009NT1
4
Figure 13. Single-
-Carrier W-
-CDMA Adjacent
Channel Power Ratio versus Output Power
RF Device Data
Freescale Semiconductor, Inc.
LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
50 OHM APPLICATION CIRCUIT: 40-
-300 MHz
V
SUPPLY
R1
C3
L1
RF
INPUT
Z1
C1
Z1, Z5
Z2
Z3
0.347 x 0.058 Microstrip
0.575 x 0.058 Microstrip
0.172 x 0.058 Microstrip
Z2
DUT
V
CC
Z4
PCB
Z3
Z4
C2
0.403 x 0.058 Microstrip
Getek Grade ML200C, 0.031,
r
= 4.1
Z5
RF
OUTPUT
C4
Figure 14. 50 Ohm Test Circuit Schematic
20
10
0
--10
--20
--30
--40
0
V
CC
= 5 Vdc
100
200
S11
300
400
500
MMG30XX
Rev 2
S22
C1
L1
S21
R1
C4
C3
C2
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
C1, C2, C3
C4
L1
R1
Description
0.01
F
Chip Capacitors
1000 pF Chip Capacitor
470 nH Chip Inductor
0
Ω
Chip Resistor
Part Number
C0603C103J5RAC
C0603C102J5RAC
BK2125HM471--T
ERJ3GEY0R00V
Manufacturer
Kemet
Kemet
Taiyo Yuden
Panasonic
MMG3009NT1
RF Device Data
Freescale Semiconductor, Inc.
5
LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15
LIFETIME BUY
S21, S11, S22 (dB)
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