MOSFET N-Ch 500V 23A TO220-3 CoolMOS CP
Parameter Name | Attribute value |
Product Category | MOSFET |
Manufacturer | Infineon |
RoHS | Details |
Technology | Si |
Mounting Style | Through Hole |
Package / Case | TO-220-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 500 V |
Id - Continuous Drain Current | 23 A |
Rds On - Drain-Source Resistance | 130 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 64 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Channel Mode | Enhancement |
Packaging | Tube |
Fall Time | 8 ns |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 192 W |
Rise Time | 14 ns |
Factory Pack Quantity | 500 |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 80 ns |
Typical Turn-On Delay Time | 35 ns |
Width | 4.4 mm |
Unit Weight | 0.211644 oz |