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FS40SM-6

Description
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
CategoryDiscrete semiconductor    The transistor   
File Size52KB,4 Pages
ManufacturerPOWEREX
Websitehttp://www.pwrx.com/Home.aspx
Download Datasheet Parametric View All

FS40SM-6 Overview

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

FS40SM-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPOWEREX
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage300 V
Maximum drain current (Abs) (ID)40 A
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.114 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment275 W
Maximum power dissipation(Abs)275 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
MITSUBISHI Nch POWER MOSFET
FS40SM-6
HIGH-SPEED SWITCHING USE
FS40SM-6
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5
1.5
r
2
2
4
20.0
φ
3.2
5.0
1.0
q
5.45
w
e
5.45
19.5MIN.
4.4
0.6
2.8
4
wr
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
q
¡V
DSS ................................................................................
300V
¡r
DS (ON) (MAX) ............................................................
0.114Ω
¡I
D ..........................................................................................
40A
TO-3P
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
ch
T
stg
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
300
±30
40
120
275
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
W
°C
°C
g
Feb.1999
Typical value
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