FRM130R datasheet, PDF - EEWORLD Datasheet

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FRM130R: Description14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE; Categorysemiconductor Discrete semiconductor; File Size49KB，6 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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FRM130R Overview

14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

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FRM130D, FRM130R,

FRM130H

June 1998

14A, 100V, 0.180 Ohm, Rad Hard,

N-Channel Power MOSFETs

Package

TO-204AA

Features

•

14A, 100V, RDS(on) = 0.180

Ω

•

Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

Meets Pre-Rad Speciﬁcations to 100KRAD(Si)

Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

Performance Permits Limited Use to 3000KRAD(Si)

Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

Survives 2E12 Typically If Current Limited to IDM

1.5nA Per-RAD(Si)/sec Typically

Pre-RAD Speciﬁcations for 3E13 Neutrons/cm

Usable to 3E14 Neutrons/cm

• Gamma Dot

• Photo Current

• Neutron

Description

The Intersil Corporation has designed a series of SECOND GENERATION hard-

ened power MOSFETs of both N and P channel enhancement types with ratings

from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose

hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness

ranging from 1E13n/cm

for 500V product to 1E14n/cm

for 100V product. Dose

rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and

2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n

)

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired

deviations from the data sheet.

Symbol

Absolute Maximum Ratings

(TC = +25

C) Unless Otherwise Speciﬁed

FRM130D, R, H

100

±20

0.60

-55 to +150

300

UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Intersil Corporation 1999

File Number

3217.1

4-1

FRM130R Related Products

	FRM130R	FRM130D	FRM130H
Description	14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

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