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FQA33N10

Description
100V N-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size564KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FQA33N10 Overview

100V N-Channel MOSFET

FQA33N10 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-3P
package instructionTO-3P, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFAST SWITCHING, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)430 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)36 A
Maximum drain current (ID)36 A
Maximum drain-source on-resistance0.052 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)163 W
Maximum pulsed drain current (IDM)144 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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