Parameter Name | Attribute value |
Brand Name | STMicroelectronics |
Maker | ST(STMicroelectronics) |
package instruction | TO-220, 3 PIN |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Factory Lead Time | 22 weeks |
Avalanche Energy Efficiency Rating (Eas) | 200 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (ID) | 100 A |
Maximum drain-source on-resistance | 0.0056 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Minimum operating temperature | -55 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 400 A |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |