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RJK0303DPB-00

Among 1 related components, RJK0303DPB-00 have related pdf.
Part Number Manufacturer Description Datasheet
RJK0303DPB-00-J0 Renesas Electronics Corporation Silicon N Channel Power MOS FET Power Switching Download
RJK0303DPB-00 parameters:

Description

Silicon N Channel Power MOS FET Power Switching

Parametric
Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerRenesas(瑞萨电子)
Parts packaging codeSC-100
package instructionSMALL OUTLINE, R-PSSO-G4
Contacts5
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)40 A
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.0056 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)55 W
Maximum pulsed drain current (IDM)160 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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