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NSVBC817-16LT1G

Among 1 related components, NSVBC817-16LT1G have related pdf.
Part Number Manufacturer Description Datasheet
NSVBC817-16LT1G ON Semiconductor Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V Download
NSVBC817-16LT1G parameters:

Description

Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V

Parametric
Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor(安森美)
package instructionSMALL OUTLINE, R-PDSO-G3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
Factory Lead Time7 weeks
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1

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