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MURB1620CTRT4G

Among 2 related components, MURB1620CTRT4G have related pdf.
Part Number Manufacturer Description Datasheet
MURB1620CTRT4G Kersemi Electronic ON SEMICONDUCTOR - MURB1620CTRT4G - ULTRA FAST DIODE; 8A; 200V; D2-PAK; FULL REEL Download
MURB1620CTRT4G ON Semiconductor Power Rectifier, Ultra-Fast Recovery, Common Anode, 16 A, 200 V, D2PAK 2 LEAD, 800-REEL Download
MURB1620CTRT4G parameters:

Description

Power Rectifier, Ultra-Fast Recovery, Common Anode, 16 A, 200 V, D2PAK 2 LEAD, 800-REEL

Parametric
Parameter NameAttribute value
Brand Nameonsemi
Is it lead-free?Lead free
Objectid2058269860
Parts packaging codeD2PAK 2 LEAD
package instructionD2PAK-3
Contacts3
Manufacturer packaging code418B-04
Reach Compliance Codenot_compliant
Country Of OriginMainland China
ECCN codeEAR99
Samacsys DescriptionON Semi MURB1620CTRT4G, Dual SMT Schottky Diode, Common Cathode, 200V 16A, 85ns, 3-Pin D2PAK
Samacsys Manufactureronsemi
Samacsys Modified On2023-03-07 16:10:32
YTEOL6.5
Other featuresFREE WHEELING DIODE
applicationULTRA FAST SOFT RECOVERY
Shell connectionANODE
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.085 µs
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30

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