TMD2635
Miniature Proximity Sensor Module
General Description
The TMD2635 features advanced proximity measurement in a
tiny (1.0mm x 2.0mm) and thin (0.5mm) optical land grid array
module that incorporates a 940nm IR VCSEL and is factory
calibrated for IR proximity response. The proximity detection
feature provides object detection (e.g. close proximity) by
photodiode detection of reflected IR energy sourced by the
integrated VCSEL emitter. Detect/release events can be
interrupt driven, and occur when proximity result crosses upper
and/or lower threshold settings. The proximity engine features
a wide range offset adjustment to compensate for unwanted IR
energy reflection at the sensor. Proximity results are further
improved by automatic ambient light subtraction.
Ordering Information
and
Content Guide
appear at end of
datasheet.
Key Benefits & Features
The benefits and features of TMD2635 Proximity Sensor Module
are listed below:
Figure 1:
Added Value of Using TMD2635
Benefits
•
Optimized for small wearable devices
Features
•
Tiny 1.0mm x 2.0mm x 0.5mm module
•
1.8V power supply with 1.8V I²C bus
•
Sleep mode (0.7μA) with fast wakeup
•
VCSEL IR emitter
•
Integrated factory calibrated 940nm IR VCSEL
•
Crosstalk and ambient light cancellation
•
Wide configuration range
•
Dual photodiode architecture
•
Offset emitter/detector package design
•
Reduced power consumption
•
Enables superior proximity detection
•
Industrial design flexibility
ams Datasheet
[v1-03] 2020-Aug-25
Page 1
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TMD2635 −
General Description
Applications
The TMD2635 applications for wearable products such as
true-wireless stereo earbuds, glasses, and watches include:
•
Power control (automatic power up/down based on user
insertion/removal)
•
Volume/mode control user detection (up/down/mute
based on user touch/tap)
Block Diagram
The functional blocks of this device are shown below:
Figure 2:
Functional Blocks of TMD2635
VDD
VDD3
IR
Filter
940nm IR VCSEL
Open Drain
Current Sink
Lower
Analog Mux
Proximity
Integration
Prox ADC Prox Data
Proximity Control
Upper
GND
Near
Photo-
diode
Far
Photo-
diode
Prox Thresholds
Interrupt Open
Drain Output
I
2
C
Interface
INT
SCL
SDA
Wait Control
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ams Datasheet
[v1-03] 2020-Aug-25
TMD2635 −
Pin Assignment
Pin Assignment
Device pinout is described below.
Figure 3:
Pin Diagram of TMD2635 (Top View)
Figure 4:
Pin Description
Pin Number
1
Pin Name
INT
Description
Interrupt. Open drain output (active low). If INT is not used, tie to GND
for enhanced ESD protection.
Supply voltage for sensor (1.8V). To enable the device to recover from
a high voltage system ESD strike, it is recommended to connect VDD
to a host GPIO pin for independent power control.
Ground. All voltages are referenced to GND.
Supply voltage for IR emitter (3.0/3.3V)
I²C serial clock input terminal
I²C serial data I/O terminal
2
3
4
5
6
Note(s):
VDD
GND
VDD3
SCL
(1)
SDA
(1)
1. When the SDA and SCL signals are swapped, the device uses a different I²C address. See the
I²C Characteristics
section for more details.
ams Datasheet
[v1-03] 2020-Aug-25
Page 3
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TMD2635 −
Absolute Maximum Ratings
Absolute Maximum Ratings
Stresses beyond those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. These are stress
ratings only. Functional operation of the device at these or any
other conditions beyond those indicated under
Electrical
Characteristics
is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
Figure 5:
Absolute Maximum Ratings
Symbol
VDD
VDD3
V
IO
I
IO
I
SCR
ESD
HBM
ESD
CDM
T
STRG
T
BODY
RH
NC
P
DISS
Parameter
Supply voltage to GND
IR emitter voltage to GND
Digital I/O terminal voltage
Digital output terminal voltage
Input current (latch up immunity)
HBM Electrostatic discharge
CDM Electrostatic discharge
Storage temperature range
Package body temperature
Relative humidity
(non- condensing)
Power dissipation
Min
-0.3
-0.3
-0.3
-1
Max
2.0
3.6
3.6
20
±100
±2000
±500
Units
V
V
V
mA
mA
V
V
Comments
Class II JEDEC JESD78E
JEDEC/ ESDA JS-001-2017
JEDEC JS-002-2014
-40
85
260
°C
°C
%
mW
Average power dissipation
over a 1 second period
IPC/JEDEC J-STD-020
(1)
5
85
50
Note(s):
1. The reflow peak soldering temperature (body temperature) is specified according to IPC/JEDEC J-STD-020 “Moisture/Reflow
Sensitivity Classification for Non-hermetic Solid State Surface Mount Devices.”
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ams Datasheet
[v1-03] 2020-Aug-25
TMD2635 −
Electrical Characteristics
Electrical Characteristics
All limits are guaranteed. The parameters with min. and max.
values are guaranteed with production tests or SQC (Statistical
Quality Control) methods.
Figure 6:
Recommended Operating Conditions
Symbol
VDD
VDD3
P
DISS
T
A
Parameter
Supply voltage to sensor
Supply voltage to IR emitter
Average power dissipation
(1)
Operating ambient temperature
Min
1.7
2.9
Typ
1.8
3.3
Max
2.0
3.6
20
Units
V
V
mW
°C
-30
85
Note(s):
1. Power dissipation averaged over 1 second period.
Figure 7:
Operating Characteristics, VDD = 1.8 V, T
A
= 25ºC (unless otherwise noted)
Symbol
f
OSC
Parameter
Oscillator frequency
Conditions
Min
7.9
Typ
8.1
Max
8.3
Units
MHz
Active state
(PON=1)
(2)
Supply current
(1)
Idle state
(PON=1)
(3)
Sleep state
(PON = 0)
(4)
V
OL
I
LEAK
V
IH
V
IL
INT, SDA output low voltage
6 mA sink current
197
340
482
I
DD
30
μA
0.7
0.6
V
Leakage current, SDA, SCL, INT
SCL, SDA input high voltage
(5)
SCL, SDA input low voltage
-5
1.26
5
μA
V
0.54
V
ams Datasheet
[v1-03] 2020-Aug-25
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