Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Infineon(Infineon) |
package instruction | LEAD FREE, PLASTIC, D2PAK-3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Factory Lead Time | 15 weeks |
Other features | AVALANCHE RATED, HIGH RELIABILITY |
Avalanche Energy Efficiency Rating (Eas) | 130 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 55 V |
Maximum drain current (Abs) (ID) | 29 A |
Maximum drain current (ID) | 29 A |
Maximum drain-source on-resistance | 0.04 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-263AB |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 175 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 68 W |
Maximum pulsed drain current (IDM) | 100 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |