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BSZ097N04LSG

Showing 4 Results for BSZ097N04LSG, including BSZ097N04LSG,BSZ097N04LS G, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
BSZ097N04LSG Infineon Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 12A Gate-source threshold voltage: 2V @ 14uA Drain-source on-resistance: 9.7mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 2.1W Type: N-channel Download
BSZ097N04LS G Infineon MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 Download
BSZ097N04LSGATMA1 Infineon MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 Download
BSZ097N04LSGXT Infineon Power Field-Effect Transistor, 12A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Download
BSZ097N04LSG Related Product Datasheets:
Part Number Datasheet
BSZ097N04LSG 、 BSZ097N04LSGXT Download Datasheet
BSZ097N04LSGATMA1 Download Datasheet
BSZ097N04LSG Related Products:
Part Number BSZ097N04LSGXT BSZ097N04LSG
Description Power Field-Effect Transistor, 12A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 12A Gate-source threshold voltage: 2V @ 14uA Drain-source on-resistance: 9.7mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 2.1W Type: N-channel
Is it Rohs certified? conform to conform to
package instruction SMALL OUTLINE, R-PDSO-N5 GREEN, PLASTIC, TSDSON-8
Reach Compliance Code compliant not_compliant
ECCN code EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 20 mJ 20 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 40 V 40 V
Maximum drain current (ID) 12 A 12 A
Maximum drain-source on-resistance 0.0142 Ω 0.0142 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-N5 R-PDSO-N5
Number of components 1 1
Number of terminals 5 5
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 160 A 160 A
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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