Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 12A Gate-source threshold voltage: 2V @ 14uA Drain-source on-resistance: 9.7mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 2.1W Type: N-channel
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| package instruction | GREEN, PLASTIC, TSDSON-8 |
| Contacts | 8 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Efficiency Rating (Eas) | 20 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 40 V |
| Maximum drain current (Abs) (ID) | 40 A |
| Maximum drain current (ID) | 12 A |
| Maximum drain-source on-resistance | 0.0142 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-N5 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 5 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 35 W |
| Maximum pulsed drain current (IDM) | 160 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | NO LEAD |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| BSZ097N04LSG | BSZ097N04LSGXT | |
|---|---|---|
| Description | Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 12A Gate-source threshold voltage: 2V @ 14uA Drain-source on-resistance: 9.7mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 2.1W Type: N-channel | Power Field-Effect Transistor, 12A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 |
| Is it Rohs certified? | conform to | conform to |
| package instruction | GREEN, PLASTIC, TSDSON-8 | SMALL OUTLINE, R-PDSO-N5 |
| Reach Compliance Code | not_compliant | compliant |
| ECCN code | EAR99 | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Efficiency Rating (Eas) | 20 mJ | 20 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 40 V | 40 V |
| Maximum drain current (ID) | 12 A | 12 A |
| Maximum drain-source on-resistance | 0.0142 Ω | 0.0142 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-N5 | R-PDSO-N5 |
| Number of components | 1 | 1 |
| Number of terminals | 5 | 5 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 160 A | 160 A |
| surface mount | YES | YES |
| Terminal form | NO LEAD | NO LEAD |
| Terminal location | DUAL | DUAL |
| Maximum time at peak reflow temperature | 40 | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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