Parameter Name | Attribute value |
Maker | Infineon |
Product Category | MOSFET |
technology | Si |
Installation style | SMD/SMT |
Package/box | PG-TSDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - drain-source breakdown voltage | 40 V |
Id-continuous drain current | 40 A |
Rds On - drain-source on-resistance | 14.2 mOhms |
Vgs th-gate-source threshold voltage | 1.2 V |
Vgs - gate-source voltage | 10 V |
Qg-gate charge | 18 nC |
Minimum operating temperature | - 55 C |
Maximum operating temperature | + 150 C |
Pd-power dissipation | 35 W |
Configuration | Single |
channel mode | Enhancement |
Encapsulation | Cut Tape |
Encapsulation | MouseReel |
Encapsulation | Reel |
high | 1.1 mm |
length | 3.3 mm |
series | OptiMOS 3 |
Transistor type | 1 N-Channel |
width | 3.3 mm |
Forward transconductance - minimum | 24 S |
Fall time | 2.8 ns |
Rise Time | 2.4 ns |
Factory packaging quantity | 5000 |
Typical shutdown delay time | 16 ns |
Typical switch-on delay time | 3.5 ns |
unit weight | 280 mg |