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BSZ097N04LS G

Description
MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size633KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSZ097N04LS G Overview

MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3

BSZ097N04LS G Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxPG-TSDSON-8
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage40 V
Id-continuous drain current40 A
Rds On - drain-source on-resistance14.2 mOhms
Vgs th-gate-source threshold voltage1.2 V
Vgs - gate-source voltage10 V
Qg-gate charge18 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation35 W
ConfigurationSingle
channel modeEnhancement
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
high1.1 mm
length3.3 mm
seriesOptiMOS 3
Transistor type1 N-Channel
width3.3 mm
Forward transconductance - minimum24 S
Fall time2.8 ns
Rise Time2.4 ns
Factory packaging quantity5000
Typical shutdown delay time16 ns
Typical switch-on delay time3.5 ns
unit weight280 mg

BSZ097N04LS G Related Products

BSZ097N04LS G BSZ097N04LSGATMA1
Description MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
Maximum operating temperature + 150 C 175 °C
Configuration Single SINGLE WITH BUILT-IN DIODE

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