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BSC070N10NS

Showing 8 Results for BSC070N10NS, including BSC070N10NS3 G,BSC070N10NS3-G, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
BSC070N10NS3 G Infineon mosfet N-channel 100v mosfet Download
BSC070N10NS3-G Infineon IMUs - Inertial Measurement Units 6-Axis 950uA Download
BSC070N10NS3G Infineon —— Download
BSC070N10NS3G_11 Infineon OptiMOSTM3 Power-Transistor Download
BSC070N10NS3GATMA1 Infineon Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 90A (Tc) Gate-source threshold voltage: 3.5V @ 75uA Drain-source on-resistance: 7mΩ @ 50A, 10V Maximum power consumption Dispersion (Ta=25°C): 114W (Tc) Type: N channel N channel, 100V, 90A, 7mΩ@10V Download
BSC070N10NS5 Infineon Superior thermal resistance Download
BSC070N10NS5ATMA1 Infineon Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 80A (Tc) Gate-source threshold voltage: 3.8V @ 50uA Drain-source on-resistance: 7mΩ @ 40A, 10V Maximum power consumption Dispersion (Ta=25°C): 83W (Tc) Type: N channel N channel, 100V, 80A, 7mΩ@10V Download
BSC070N10NS5SC Infineon OptiMOSTM 5 Power-Transistor, 100 V Download
BSC070N10NS Related Product Datasheets:
Part Number Datasheet
BSC070N10NS3 G 、 BSC070N10NS3G 、 BSC070N10NS3GATMA1 Download Datasheet
BSC070N10NS5 、 BSC070N10NS5ATMA1 Download Datasheet
BSC070N10NS3-G Download Datasheet
BSC070N10NS Related Products:
Part Number BSC070N10NS3 G BSC070N10NS3G BSC070N10NS3GATMA1
Description mosfet N-channel 100v mosfet Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 90A (Tc) Gate-source threshold voltage: 3.5V @ 75uA Drain-source on-resistance: 7mΩ @ 50A, 10V Maximum power consumption Dispersion (Ta=25°C): 114W (Tc) Type: N channel N channel, 100V, 90A, 7mΩ@10V
Is it lead-free? - Lead free Contains lead
Is it Rohs certified? - conform to conform to
package instruction - SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5
Contacts - 8 8
Reach Compliance Code - not_compliant not_compliant
ECCN code - EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - 160 mJ 160 mJ
Shell connection - DRAIN DRAIN
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 100 V 100 V
Maximum drain current (ID) - 90 A 90 A
Maximum drain-source on-resistance - 0.007 Ω 0.007 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - R-PDSO-F5 R-PDSO-F5
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 5 5
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - 360 A 360 A
Certification status - Not Qualified Not Qualified
surface mount - YES YES
Terminal surface - Matte Tin (Sn) Tin (Sn)
Terminal form - FLAT FLAT
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON

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