| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| package instruction | SMALL OUTLINE, R-PDSO-F5 |
| Contacts | 8 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 160 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 90 A |
| Maximum drain current (ID) | 90 A |
| Maximum drain-source on-resistance | 0.007 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-F5 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 5 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 114 W |
| Maximum pulsed drain current (IDM) | 360 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| BSC070N10NS3G | BSC070N10NS3 G | BSC070N10NS3GATMA1 | |
|---|---|---|---|
| Description | mosfet N-channel 100v mosfet | Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 90A (Tc) Gate-source threshold voltage: 3.5V @ 75uA Drain-source on-resistance: 7mΩ @ 50A, 10V Maximum power consumption Dispersion (Ta=25°C): 114W (Tc) Type: N channel N channel, 100V, 90A, 7mΩ@10V | |
| Is it lead-free? | Lead free | - | Contains lead |
| Is it Rohs certified? | conform to | - | conform to |
| package instruction | SMALL OUTLINE, R-PDSO-F5 | - | SMALL OUTLINE, R-PDSO-F5 |
| Contacts | 8 | - | 8 |
| Reach Compliance Code | not_compliant | - | not_compliant |
| ECCN code | EAR99 | - | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 160 mJ | - | 160 mJ |
| Shell connection | DRAIN | - | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | - | 100 V |
| Maximum drain current (ID) | 90 A | - | 90 A |
| Maximum drain-source on-resistance | 0.007 Ω | - | 0.007 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-F5 | - | R-PDSO-F5 |
| JESD-609 code | e3 | - | e3 |
| Humidity sensitivity level | 1 | - | 1 |
| Number of components | 1 | - | 1 |
| Number of terminals | 5 | - | 5 |
| Operating mode | ENHANCEMENT MODE | - | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | - | 150 °C |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | - | RECTANGULAR |
| Package form | SMALL OUTLINE | - | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | - | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 360 A | - | 360 A |
| Certification status | Not Qualified | - | Not Qualified |
| surface mount | YES | - | YES |
| Terminal surface | Matte Tin (Sn) | - | Tin (Sn) |
| Terminal form | FLAT | - | FLAT |
| Terminal location | DUAL | - | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED |
| transistor applications | SWITCHING | - | SWITCHING |
| Transistor component materials | SILICON | - | SILICON |
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