Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
BC858BWT1 | Rochester Electronics | 100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419-04, SC-70, 3 PIN | Download |
BC858BWT1 | ON Semiconductor | Bipolar Transistors - BJT 100mA 30V PNP | Download |
BC858BWT1 | LRC | Small Signal Bipolar Transistor, 0.1A I(C), PNP, | Download |
BC858BWT1 | Motorola ( NXP ) | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon | Download |
BC858BWT106 | ROHM Semiconductor | Bipolar Transistors - BJT PNP 30V 1MA | Download |
BC858BWT1G | ON Semiconductor | Bipolar Transistors - BJT 100mA 30V PNP | Download |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Motorola ( NXP ) |
package instruction | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Maximum collector current (IC) | 0.1 A |
Collector-based maximum capacity | 4.5 pF |
Collector-emitter maximum voltage | 30 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 220 |
JESD-30 code | R-PDSO-G3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | PNP |
Maximum power consumption environment | 0.15 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 100 MHz |
VCEsat-Max | 0.65 V |
Base Number Matches | 1 |