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BC858BWT1

Among 6 related components, BC858BWT1 have related pdf.
Part Number Manufacturer Description Datasheet
BC858BWT1 Rochester Electronics 100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419-04, SC-70, 3 PIN Download
BC858BWT1 ON Semiconductor Bipolar Transistors - BJT 100mA 30V PNP Download
BC858BWT1 LRC Small Signal Bipolar Transistor, 0.1A I(C), PNP, Download
BC858BWT1 Motorola ( NXP ) Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon Download
BC858BWT106 ROHM Semiconductor Bipolar Transistors - BJT PNP 30V 1MA Download
BC858BWT1G ON Semiconductor Bipolar Transistors - BJT 100mA 30V PNP Download
BC858BWT1 parameters:

Description

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

Parametric
Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-based maximum capacity4.5 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)220
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.65 V
Base Number Matches1

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