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APT30M60J

Among 2 related components, APT30M60J have related pdf.
Part Number Manufacturer Description Datasheet
APT30M60J Microsemi MOSFET Power MOSFET - MOS7 Download
APT30M60J_09 Microsemi N-Channel MOSFET Download
APT30M60J parameters:

Description

MOSFET Power MOSFET - MOS7

Parametric
Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeISOTOP
package instructionROHS COMPLIANT, ISOTOP-4
Contacts4
Manufacturer packaging codeISOTOP
Reach Compliance Codeunknown
Other featuresAVALANCHE RATED, UL RECOGNIZED
Avalanche Energy Efficiency Rating (Eas)1200 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)31 A
Maximum drain-source on-resistance0.15 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUFM-X4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)160 A
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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