Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | Microsemi |
Parts packaging code | ISOTOP |
package instruction | ROHS COMPLIANT, ISOTOP-4 |
Contacts | 4 |
Manufacturer packaging code | ISOTOP |
Reach Compliance Code | unknown |
Other features | AVALANCHE RATED, UL RECOGNIZED |
Avalanche Energy Efficiency Rating (Eas) | 1200 mJ |
Shell connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 600 V |
Maximum drain current (ID) | 31 A |
Maximum drain-source on-resistance | 0.15 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-XUFM-X4 |
Number of components | 1 |
Number of terminals | 4 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 160 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | UNSPECIFIED |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |