EEWORLDEEWORLDEEWORLD

Part Number

Search
Datasheet >

2sk1764

Showing 18 Results for 2sk1764, including 2SK1764,2SK1764, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
2SK1764 Hitachi (Renesas ) Silicon N-Channel MOS FET Download
2SK1764 Renesas Electronics Corporation 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
2SK1764-E Renesas Electronics Corporation 2000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, UPAK-3 Download
2SK1764KY Hitachi (Renesas ) Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Download
2SK1764KY Renesas Electronics Corporation 2A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET Download
2SK1764KYTL Renesas Electronics Corporation 2A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET Download
2SK1764KYTL Hitachi (Renesas ) Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Download
2SK1764KYTL-E Renesas Electronics Corporation 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
2SK1764KYTR Hitachi (Renesas ) Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Download
2SK1764KYTR Renesas Electronics Corporation 2A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET Download
2SK1764KYTR-E Renesas Electronics Corporation 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
2SK1764KYUL Hitachi (Renesas ) Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Download
2SK1764KYUL Renesas Electronics Corporation 2A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET Download
2SK1764KYUR Hitachi (Renesas ) Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Download
2SK1764KYUR Renesas Electronics Corporation 2A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET Download
2SK1764KYUR-E Renesas Electronics Corporation Nch Single Power MOSFET 60V 2A 450mohm UPAK/SC-62 Download
2SK1764TR Renesas Electronics Corporation SMALL SIGNAL, FET, UPAK-3 Download
2SK1764TR Hitachi (Renesas ) Small Signal Field-Effect Transistor, UPAK-3 Download
2sk1764 Related Product Datasheets:
Part Number Datasheet
2SK1764KY 、 2SK1764KY 、 2SK1764KYTL 、 2SK1764KYTL 、 2SK1764KYTR 、 2SK1764KYTR 、 2SK1764KYUL 、 2SK1764KYUL 、 2SK1764KYUR 、 2SK1764KYUR Download Datasheet
2SK1764 、 2SK1764KYTL-E 、 2SK1764KYTR-E Download Datasheet
2SK1764TR 、 2SK1764TR Download Datasheet
2SK1764KYUR-E Download Datasheet
2SK1764-E Download Datasheet
2SK1764 Download Datasheet
2sk1764 Related Products:
Part Number 2SK1764KY 2SK1764KY 2SK1764KYTL 2SK1764KYTL 2SK1764KYTR 2SK1764KYTR 2SK1764KYUL 2SK1764KYUL 2SK1764KYUR 2SK1764KYUR
Description 2A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 2A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET 2A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 2A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 2A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET Power Field-Effect Transistor, 2A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code unknow unknow unknow compli unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Maximum drain current (ID) 2 A 2 A 2 A 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Maximum drain-source on-resistance 0.6 Ω 0.6 Ω 0.6 Ω 0.6 Ω 0.6 Ω 0.6 Ω 0.6 Ω 0.6 Ω 0.6 Ω 0.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1 1 1 1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Search Index   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Index   3P 5I 6C 7F 8K 9R CB IY JZ NE PA PG QD ZC ZE

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号