2A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
package instruction | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (ID) | 2 A |
Maximum drain-source on-resistance | 0.6 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSSO-F3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | TIN LEAD |
Terminal form | FLAT |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |