UMW15N10 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> UMW15N10

UMW15N10: DescriptionDrain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 80mΩ @ 10A, 10V Maximum power consumption Dispersion (Ta=25°C): 50W(Tc) Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size2MB，6 Pages; ManufacturerUMW(Guangdong Youtai Semiconductor Co., Ltd.); Websitehttp://www.umw-ic.com/; UMW is a leading provider of LDOs, MOSFETs, DC/DC, RS-232, RS-485, ESD/TVS, optocouplers, logic circuits, temperature sensor from mainland China. UTD's solutions enable low-risk development, lower overall system cost, and faster time-to-market for a variety of global applications.

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UMW15N10 Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 80mΩ @ 10A, 10V Maximum power consumption Dispersion (Ta=25°C): 50W(Tc) Type: N-channel

UMW15N10 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	20A(Tc)
Gate-source threshold voltage	2.5V @ 250uA
Drain-source on-resistance	80mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)	50W(Tc)
type	N channel

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UMW

UMW 15N10

=20A

UMW 15N10

www.umw-ic.com

友台半导½有限公司

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