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UF802F-T0-10001

Description
UF802F-T0-10001
CategoryDiscrete semiconductor    diode   
File Size57KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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UF802F-T0-10001 Overview

UF802F-T0-10001

UF802F-T0-10001 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Base Number Matches1

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UF800F~UF806F
ULTRAFAST RECOCVEY RECTIFIERS
CURRENT
VOLTAGE
50 to 600 Volts
FEATURES
0.272(6.9)
0.248(6.3)
8.0 Amperes
0.112(2.85)
0.100(2.55)
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency
• Low forwrd voltge, high current capability
• High surge capacity
• Ultra fast recovery times, high voltage
• In compliance with EU RoHS 2002/95/EC directives
• Glass passivation junction
0.063(1.6)MAX.
0.606(15.4)
0.583(14.8)
MECHANCAL DATA
• Case: ITO-220AC full molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.055 ounces, 1.5615 grams.
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.177(4.5)
0.137(3.5)
0.543(13.8)
0.512(13.0)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at Tc =100
O
C
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 8.0A
Maximum DC Reverse Current T
A
=25
O
C
at Rated DC Blocking Voltage T
A
=125
O
C
Maximum Thermal Resistance (Note 2)
Typical Junction Capacitance
Maximum Reverse Recovery Time (Note 1)
Operating Junction and Storage Temperature Range
SYMBOL
V
R R M
V
R M S
V
D C
I
F (A V )
I
F S M
V
F
I
R
R
θ
JC
C
J
t
rr
T
J
,T
S T G
UF800F UF801F UF802F UF803F UF804F UF806F
50
35
50
100
70
100
200
140
200
8.0
125
1.0
1.0
500
5
80
50
-55 to +150
50
100
1.3
1.7
300
210
300
400
280
400
600
420
600
UNITS
V
V
V
A
A
V
μA
O
C/W
pF
ns
O
C
NOTES:
1. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
2. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted.
STAD-MAR.05.2009
PAGE . 1
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