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UF2002CT_10001

Description
Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB,
CategoryDiscrete semiconductor    diode   
File Size93KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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UF2002CT_10001 Overview

Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB,

UF2002CT_10001 Parametric

Parameter NameAttribute value
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage200 V
Maximum reverse current1 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1

UF2002CT_10001 Preview

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UF2000CT~UF2006CT
ULTRAFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• Ultra fast recovery times, high voltage.
• Lead free in comply with EU RoHS 2011/65/EU directives
50 to 600 Volts
CURRENT
20 Amperes
MECHANCALDATA
• Case: TO-220AB full molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Ma xi m um Re c ur re nt P e a k Re ve r s e Vo lta g e
Ma xi m um RM S Vo lta g e
Ma xi m um D C B lo c k i ng Vo lta g e
Ma xi m um A ve r a g e F o r wa r d C urr e nt le a d le ng th a t T
C
= 1 0 0
O
C
P e a k F o r wa r d S urg e C ur re nt : 8 .3 m s s i ng le ha lf s i ne -wa ve
s up e ri m p o s e d o n r a te d lo a d ( J E D E C me tho d )
Ma xi m um F o r wa r d Vo lt a g e a t 1 0 A
Ma xi m um D C Re ve r s e C ur re nt a t Ra te d D C B lo c k i ng
Vo lta g e
Typ i c a l J unc ti o n C a p a c i ta nc e (No te 1 )
Ma xi m um Re ve r s e Re c o ve r y Ti m e ( No te 2 )
Typ i c a l The r ma l Re s i s ta nc e ( No te 3 )
Op e ra ti ng J unc ti o n a nd S to r a g e Te m p e ra ture Ra ng e
T
J
=2 5
O
C
T
J
=1 2 5
O
C
S YM B OL
V
RRM
V
RMS
V
DC
I
F ( AV )
I
F S M
V
F
I
R
C
J
t
rr
R
θJ
C
T
J
,T
S TG
UF 2 0 0 0 C T U F 2 0 0 1 C T UF 2 0 0 2 C T UF 2 0 0 3 C T UF 2 0 0 4 C T UF 2 0 0 6 C T
UNITS
V
V
V
A
A
50
35
50
100
70
100
200
140
200
20
150
300
210
300
400
280
400
600
420
600
1
1
500
200
50
2
-6 5 to +1 5 0
1.3
1.7
V
μ
A
pF
100
O
ns
C / W
O
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Thermal resistance from Junction to ambient and from junction to lead
January 7 2013-REV.02
PAGE . 1

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