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UF104

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size36KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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UF104 Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

UF104 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-41
package instructionO-PALF-W2
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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UF100~UF1010
ULTRAFAST RECOVERY RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
• Exceeds environmental standards of MIL-S-19500/228.
• Ultra Fast switching for high efficiency.
• In compliance with EU RoHS 2002/95/EC directives
.205(5.2)
.160(4.1)
.034(.86)
50 to 1000 Volts
CURRENT
1.0 Amperes
DO-41
Unit: inch(mm)
MECHANICALDATA
• Case: Molded plastic, DO-41
• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026
• Polarity: Band denotes cathode
• Mounting Position: Any
• Weight: 0.0118 ounce, 0.336 gram
1.0(25.4)MIN.
.028(.71)
.107(2.7)
1.0(25.4)MIN.
.080(2.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 5 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 2 )
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 3 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
U F 1 0 0 U F 1 0 1 U F 1 0 2 U F 1 0 4 U F 1 0 6 U F 1 0 8 U F 1 0 1 0
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
C
J
R
θ
J A
t
rr
T
J
, T
S T G
50
-5 5 to +1 5 0
1 .0
50
35
50
100
70
100
200
140
200
400
280
400
1 .0
30
1 .3
1 0 .0
500
17
60
75
1 .7
600
420
600
800
560
800
1000
700
1000
U N IT S
V
V
V
A
A
V
µ
A
pF
O
C / W
ns
O
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Thermal Resistance from Junction to Ambient and from Junction to lead length 0.375”(9.5mm) P.C.B. mounted.
3. Reverse Recovery Time I
F
=.5A ,I
R
=1A , I
rr
=.25A
STAD-FEB.12.2009
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