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UF100S_07

Description
1 A, 50 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size40KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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1 A, 50 V, SILICON, SIGNAL DIODE

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UF100S ~ UF1010S
ULTRAFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
1.0(25.4)MIN.
50 to 1000 Volts
CURRENT
1.0 Amperes
A-405
Unit: inch(mm)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
• Exceeds environmental standards of MIL-S-19500/228.
• Ultra Fast switching for high efficiency.
• In compliance with EU RoHS 2002/95/EC directives
.025(.64)
.021(.53)
.205(5.2)
MECHANICALDATA
• Case: Molded plastic, A-405
• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026
• Polarity: Band denotes cathode
• Mounting Position: Any
• Weight: 0.008 ounce, 0.22 gram
.160(4.1)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
PAR AME T E R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 5 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 0 0
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 2 )
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 3 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B OL
UF 1 0 0 S UF 1 0 1 S UF 1 0 2 S UF 1 0 4 S UF 1 0 6 S UF 1 0 8 S UF 1 0 1 0 S
U N IT S
V
RRM
V
RMS
V
DC
I
F ( A V )
I
F S M
V
F
I
R
C
J
R
θ
J A
t
rr
T
J
, T
S TG
50
- 5 5 TO + 1 5 0
1 .0
50
35
50
100
70
100
200
140
200
400
280
400
1 .0
30
1 .3
5 .0
500
17
60
75
O
1.0(25.4)MIN.
.107(2.7)
.080(2.0)
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
1 .7
V
uA
pF
C / W
ns
O
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Thermal Resistance from Junction to Ambient and from Junction to lead length 0.375”(9.5mm) P.C.B. mounted.
3. Reverse Recovery Time I
F
=.5A ,I
R
=1A , I
rr
=.25A
STAD-FEB.28.2007
PAGE . 1
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