TSP10N60M/TSF10N60M
TSP10N60M/TSF10N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 10.0A,600V,Max.R
DS(on)
=0.8 Ω @ V
GS
=10V
• Low gate charge(typical 48nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
T
C
=25℃ unless otherwise specified
TSP10N60M
TSF10N60M
Parameter
Units
V
V
600
± 30
T
C
= 25℃
T
C
= 100℃
(Note 1)
(Note 2)
(Note 1)
(Note 3)
162
1.30
-55 to +150
300
10.0
6.0
40
709
16.2
4.5
52
0.42
10.0*
6.0*
40*
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25℃)
-Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink Typ.
Thermal Resistance,Junction-to-Ambient
TSP10N60M
TSF10N60M
Units
℃/W
℃/W
℃/W
0.77
0.5
62.5
2.4
--
62.5
© 2018 Truesemi Semiconductor Corporation
Ver.C1
www.truesemi.com
TSP10N60M/TSF10N60M
Electrical Characteristics
T
C
=25
℃
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250 uA㎂
V
GS
= 10 V, I
D
= 5.0A
3.0
--
--
0.62
5.0
V
Ω
0.8
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 uA㎂
ID = 250 uA, Referenced to 25
℃
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
J
= 125℃
V
GS
= 30 V, V
DS
= 0 V
V
GS
=- 30 V, V
DS
= 0 V
600
--
--
--
--
--
--
0.7
--
--
--
--
--
--
1
10
100
-100
V
V/℃
uA
uA
nA㎁
nA㎁
△BVDSS
Breakdown Voltage Temperature
/
△TJ
Coefficient
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1650
165
18
--
--
--
pF㎊
pF㎊
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 480 V, I
D
= 10.0A,
V
GS
= 10 V
(Note 4,5)
V
DS
= 300V, I
D
= 10.0A,
R
G
= 25 Ω
(Note 4,5)
--
--
--
--
--
--
--
25
70
140
80
48
7.0
18.0
--
--
--
--
--
--
--
ns
ns㎱
ns㎱
ns㎱
nC
nC
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 10.0A, V
GS
= 0 V
I
S
=10.0A, V
GS
= 0 V
di
F
/dt = 100 A/μs
(Note 4)
--
--
--
--
--
--
--
--
430
4.3
10.0
40.0
1.4
--
--
A
V
ns㎱
uC
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=13mH, I
AS
=10.0A, V
DD
=50V, R
G
=25
Ω,
Starting TJ=25
℃
3. I
SD
≤10.0A, di/dt ≤ 200A/us, V
DD
≤ BV
DSS
, Starting TJ = 25
℃
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
© 2018 Truesemi Semiconductor Corporation
Ver.C1
www.truesemi.com
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