DONGGUAN NANJING ELECTRONICS LTD.,
TO-220-3L Plastic-Encapsulate Transistors
TIP120,121,122
Darlington TRANSISTOR
Darlington TRANSISTOR
(NPN)
(PNP)
TO-220-3L
TIP125,126,127
1.BASE
2.COLLECTOR
FEATURES
Medium Power Complementary
Silicon Transistors
3.EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
Parameter
TIP120
TIP125
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
R
θJc
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Junction Temperature
Storage Temperature
60
60
TIP121
TIP126
80
80
5
5
2
62.5
1.92
150
-55to+150
TIP122
TIP127
100
100
V
V
V
A
W
℃/W
℃/W
℃
℃
Unit
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
Symbol
V
(BR)CBO
Test
conditions
Min
60
80
100
60
80
100
0.2
Max
Unit
V
I
C
= 1mA,I
E
=0
Collector-emitter breakdown voltage
V
CEO
(SUS)
I
C
= 30mA,I
B
=0
V
CB
= 60 V, I
E
=0
V
CB
= 80 V, I
E
=0
V
CB
= 100V, I
E
=0
V
CE
=30 V, I
B
=0
V
CE
=40 V, I
B
=0
V
CE
=50 V, I
B
=0
V
EB
=5 V, I
C
=0
V
CE
= 3V, I
C
=0.5A
V
CE
= 3V, I
C
=3 A
I
C
=3A,I
B
=12mA
I
C
=5 A,I
B
=20mA
V
CE
=3V, I
C
=3 A
V
CB
=10V, I
E
=0,f=0.1MHz
V
Collector cut-off current
I
CBO
mA
Collector cut-off current
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE
(sat)
V
BE
0.5
2
1000
1000
2
4
2.5
300
200
mA
mA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Output Capacitance
TIP125,TIP126,TIP127
TIP120,TIP121,TIP122
V
V
pF
C
ob
B,Aug,2012
Typical Characteristics
-6
TIP127
h
FE
—— I
C
V
CE
= -3V
T
a
=100 C
o
Static Characteristic
10000
-5
(A)
-1.0mA
-0.9mA
-0.8mA
-0.7mA
-0.6mA
-0.5mA
COMMON
EMITTER
T
a
=25
℃
h
FE
DC CURRENT GAIN
1000
I
C
COLLECTOR CURRENT
-4
-3
-2
-0.4mA
-0.3mA
I
B
=-0.2mA
-0
-1
-2
-3
-4
-5
-6
-7
-8
100
T
a
=25 C
o
-1
-0
10
-1
-10
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
-100
I
C
(mA)
-1000
-5000
-2.0
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
β=250
-1200
V
CEsat
——
β=250
I
C
-1.8
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
-1
-10
-1000
T
a
=25
℃
-800
T
a
=25
℃
-600
T
a
=100
℃
-400
T
a
=100
℃
-200
-100
-1000
-5000
-0
-1
-10
-100
-1000
-5000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
——
-5000
V
BE
250
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
I
C
(mA)
-1000
Ta=100 C
-100
o
COLLECTOR CURRENT
C
(pF)
200
T
a
=25 C
o
-10
CAPACITANCE
150
100
Ta=25
℃
-1
C
ib
C
ob
50
VCE=-3V
-0.1
-0.0
-0.5
-1.0
-1.5
-2.0
0
-0.1
-1
-10
-20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
3
P
c
——
T
a
COLLECTOR POWER DISSIPATION
P
c
(W)
2
1
0
0
25
50
75
100
125
150
B,Aug,2012
AMBIENT TEMPERATURE
T
a
(
℃
)
Parametric
View All
ADI Reference Circuit
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