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TDM3534

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 10mΩ @ 10A, 10V Maximum power consumption Dispersion (Ta=25°C): 20W (Tc) Type: Dual N-channel Asy.DN channel 30V Upper tube 16mΩ@4.5V Lower tube 16mΩ@4.5V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size645KB,8 Pages
ManufacturerTechcode Semiconductor, Inc.
Websitehttp://www.techcodesemi.com/cn/index.asp
In the field of high-end analog circuit design and production, American Ted Semiconductor Co., Ltd. has 12 years of comprehensive design experience. We not only have the world's leading analog circuit design technology, but also have a more complete and advanced product quality management method. Due to the production method of "no production line design company", we use a more efficient wafer foundry cooperation model in business operations, so that we can quickly use advanced and more time-effective technology to design high-end analog circuit products with higher cost performance, and then quickly meet customers' needs for high-end products in the growing market demand.
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TDM3534 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 18A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 10mΩ @ 10A, 10V Maximum power consumption Dispersion (Ta=25°C): 20W (Tc) Type: Dual N-channel Asy.DN channel 30V Upper tube 16mΩ@4.5V Lower tube 16mΩ@4.5V

TDM3534 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C18A(Tc)
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance10mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)20W(Tc)
typeDual N-channel

TDM3534 Preview

Download Datasheet
 
 
 
 
T
echcode
®
Dual N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3534
DESCRIPTION 
The  TDM3534  uses  advanced  trench  technology  to 
provide  excellent  RDS(ON)  and  low  gate  charge.  This 
device  is  suitable  for  use  as  a  load  switch  or  in 
 
PWM 
applications. 
GENERAL FEATURES 
RDS(ON) < 16mΩ @ VGS=4.5V 
 
RDS(ON) < 10mΩ @ VGS=10V 
High Power and current handling capability 
ESD protection 
Lead free product is available 
Surface Mount Package 
 
 
Application 
PWM applications 
Load switch 
Power management 
 
Top view of SOP‐8 
 
 
ABSOLUTE MAXIMUM RATINGS(T
A
=25℃unless otherwise noted) 
Parameter 
Drain‐Source Voltage 
Gate‐Source Voltage 
Diode Continuous Forward Current 
Continuous Drain Current
(note1)
 
Pulse Drain Current Tested
(note4)
 
Maximum Power Dissipation 
Continuous Drain Current 
Pulse Drain Current Tested 
Maximum Power Dissipation 
Thermal Resistance‐Junction to Ambient
(note 5)
 
Maximum Operating Junction Temperature 
Storage Temperature Range 
 
Symbol 
V
DS
 
V
GS
 
Is(T
C
=25℃) 
I
D(
T
C
=25℃
)
 
I
DP(
T
C
=25℃
)
 
P
D(
T
C
=25℃
)
 
I
D
 
(
T
A
=25℃
)
 
I
D
 
(
T
A
=70℃
)
 
I
DP(
T
A
=25℃
)
 
P
D(
T
A
=25℃
)
 
R
θJA(t
10s)
 
R
θJA(Steady State)
 
T
J
 
T
STG
 
Channel 1 
30 
+20 
18 
45
 
 
20 
9.1 
7.3 
36 
1.13 
35 
70 
150 
‐55 To 150 
Channel 2 
30 
+20 
18
 
 
45
 
 
20 
9.1 
7.3 
36 
1.13 
35 
70 
Unit 
℃/W 
℃ 
℃ 
 
December  14,  2016 
                                               
Techcode  Semiconductor  Limited 
                                               
www.techcodesemi.com 
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