SVF5N60D datasheet, PDF - EEWORLD Datasheet

SVF5N60D: DescriptionHigh voltage MOSFET; CategoryDiscrete semiconductor; ManufacturerSilan; Websitehttp://www.silanic.com.cn/; Hangzhou Silan Microelectronics Co., Ltd. (SSE stock code: Silan Micro, 600460) is located in Hangzhou High-tech Industrial Development Zone. It is a high-tech enterprise specializing in integrated circuit chip design and semiconductor microelectronics related product production. The company's current main products are integrated circuits and semiconductor products.

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SVF5N60D Overview

High voltage MOSFET

Parameters

BVDSS[V]：600

Type：N

VGS[±V]：30

ID[A]：5

VGS(TH)[V]：2～4

RDS(on).Max@VGS=10V[Ω]：2.15

Package：TO-252-2L

Parameter Name	Attribute value
Drain-source voltage (Vdss)	600V
Continuous drain current (Id) at 25°C	5A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	2.15Ω @ 2.5A,10V
Maximum power dissipation (Ta=25°C)	120W(Tc)
type	N channel

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