SVF4N60F(S) datasheet, PDF - EEWORLD Datasheet

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SVF4N60F(S): CategoryDiscrete semiconductor MOS (field effect tube); File Size807KB，11 Pages; ManufacturerSilan; Websitehttp://www.silanic.com.cn/; Hangzhou Silan Microelectronics Co., Ltd. (SSE stock code: Silan Micro, 600460) is located in Hangzhou High-tech Industrial Development Zone. It is a high-tech enterprise specializing in integrated circuit chip design and semiconductor microelectronics related product production. The company's current main products are integrated circuits and semiconductor products.

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SVF4N60D/F/T/M

说明书

4A、600V N沟道增强型场效应管

描述

SVF4N60D/F/T/M

沟道增强型高压功率

MOS

场效应晶½管采

用士兰微电子的

F-Cell

平面高压

VDMOS

工艺技术制造。先进的工

艺及元胞结构½得该产品具有较½的导通电阻、

优越的开关性½及很高

的雪崩击穿耐量。

该产品可广泛应用于

AC-DC

开关电源，DC-DC 电源½换器，高

压

桥

PWM

马达驱动。

特点



4A，600V，R

DS(on)

（典型值）

=2.0@V

=10V

½栅极电荷量

½反向传输电容

开关速度快

提升了

dv/dt

½力

产品规格分类

产品名称

SVF4N60F

SVF4N60T

SVF4N60DTR

SVF4N60M

封装½式

TO-220F-3L

TO-220-3L

TO-252-2L

TO-251D-3L

打印名称

SVF4N60F

SVF4N60T

SVF4N60D

SVF4N60M

环保等级

无铅

无卤

包装

料管

编带

料管

杭州士兰微电子股½有限公司

http: //www.silan.com.cn

版本号：3.4

共

页

第

页

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