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SS38B

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size438KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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SS38B Overview

Rectifier Diode,

SS38B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codecompli

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Download Datasheet
SS32B THRU SS320B
Surface Mount Schottky Rectifier
Features
RoHS
COMPLIANT
● Low profile package
● Ideal for automated placement
● Guardring for overvoltage protection
● Low power losses, high efficiency
● High forward surge capability
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °
C
Typical Applications
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
Mechanical Data
Package:
DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, resistance load, Ta (FIG.1)
Surge(non-repetitive)forward current
@60Hz half-sine wave,1 cycle, Ta=25℃
Storage temperature
Junction temperature
VRRM
IO
V
A
SYMBOL UNIT SS32B SS33B SS34B SS35B SS36B SS38B SS310B SS315B SS320B
SS32B SS33B SS34B SS35B SS36B SS38B SS310B SS315B SS320B
20
30
40
50
60
3.0
80
100
150
200
IFSM
Tstg
Tj
A
-55~+125
70
-55 ~+150
-55 ~+150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum DC reverse current
at rated DC blocking voltage
per diode @ VRM=VRRM
SYMBOL UNIT
TEST
SS32B SS33B SS34B SS35B SS36B SS38B SS310B SS315B SS320B
CONDITIONS
IFM=3.0A
Ta=25℃
IRRM
mA
Ta=100℃
10
5
0.50
0.50
0.70
0.85
0.10
0.90
VF
V
1/4
S-S134
Rev. 2.3,28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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