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SS12A

Description
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size234KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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SS12A Overview

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

SS12A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionR-PDSO-C2
Reach Compliance Codecompliant
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage20 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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SS12A THRU SS120A 
 
RoHS
COMPLIANT
Surface Mount Schottky Rectifier
Features
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in low voltage high frequency inverters, freewheeling,
DC/DC converters, and polarity protection applications.
Mechanical Data
Package:
DO-214AC (SMA) 
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Cathode line denotes the cathode end
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
SYMBOL
UNIT
SS
12A
13A
14A
15A
16A
SS
12A
V
RRM
I
O
I
FSM
Tstg
Tj
V
A
A
-55~+125
20
13A
30
14A
40
15A
50
16A
60
1.0
30
-55 ~+150
-55 ~+150
18A
80
110A
100
115A
150
120A
200
18A
110A
115A
120A
Device marking code
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, resistance load,
Ta (FIG.1)
Surge(non-repetitive)forward current
@60Hz half-sine wave,1 cycle, Ta=25℃
Storage temperature
Junction temperature
■Electrical
Characteristics
(T
a=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum DC reverse current
at rated DC blocking voltage
per diode@ V
RM
=V
RRM
SYMBOL
V
F
UNIT
V
TEST
CONDITIONS
I
FM
=1.0A
Ta=25℃
I
RRM
mA
Ta=100℃
10
5.0
SS
12A
13A
0.50
0.50
14A
15A
16A
0.70
18A
110A
115A
120A
0.85
0.10
0.90
Thermal Characteristics
(T
a=25℃ Unless otherwise specified)
PARAMETER
SYMBOL
R
θJ-A
Thermal resistance
R
θJ-L
℃/W
20
1)
UNIT
SS
12A
13A
14A
15A
16A
65
1)
18A
110A
115A
120A
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
1/4
S-S118
Rev. 2.4, 09-Apr-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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