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SS1090VFL

Description
Schottky diodes
CategoryDiscrete semiconductor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SS1090VFL Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: SS1090VFL


parameter:


Repetitive reverse voltage peak Vrrm: 90V


Maximum average rectified current Io: 1A


Maximum forward surge current I FSM: 50A


Forward voltage drop VF: 0.68V when IF=1A


Maximum feedback current IR: 100uA when VR=90V


Package: SOD-123FL


SS1090VFL Preview

Download Datasheet
SS1090VFL
LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
0.075(1.90)
0.067(1.70)
0.044(1.10)
0.031(0.80)
0.043(1.08)
0.038(0.98)
90 Volts
CURRENT
1 Ampere
• Fast switching speed
• Surface mount package ideally suited for automatic insertion
• Low power loss, high efficiency
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.115(2.90)
0.106(2.70)
MECHANICAL DATA
• Case: SOD-123FL, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0006 ounces, 0.0173 grams
• Polarity:Color band denotes cathode end
• Marking: RD
1
0.145(3.70)
0.137(3.50)
0.030(0.75)
0.017(0.45)
2
C atho d e
o
A n od e
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
PAR AME T E R
Re ve rs e Vo lta g e
P e a k Re ve rs e Vo lta g e
A ve ra g e Re c ti fi e d C urre nt
P e a k F o rwa rd S urg e C urre nt:8 .3 ms s i ng le ha lf s i ne -wa ve
s up e ri mp o s e d o n ra te d lo a d (J E D E C me tho d )
Typ i c a l The rma l Re s i s ta nc e , J unc ti o n to A mb i e nt
( No te 1 )
S YMB OL
V
R
V
RRM
I
O
I
F S M
R
ΘJ
A
T
J
,T
S TG
VAL U E
90
90
1
50
180
-5 5 to +1 5 0
O
0.008(0.20)
0.004(0.10)
U N IT S
V
V
A
A
C /W
O
Op e ra ti ng J unc ti o n Te mp e ra ture a nd S to ra g e Te mp e ra ture Ra ng e
C
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
PARAMETER
Reverse Breakdown Voltage
Reverse Current
Forward Voltage
Typical Junction Capacitance
SYMBOL
V
(BR)
I
R
V
F
C
J
I
R
=1mA
V
R
=90 V
I
F
=1.0A
V
R
=0V, f=1.0MH
Z
TEST CONDITION
MIN.
90
-
-
-
TYP.
-
-
0.68
203
MAX.
-
100
0.73
-
UNITS
V
μA
V
pF
o
NOTES:
1.Mounted on 48cm FR-4 PCB
November 24,2011-REV.00
PAGE . 1
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