SPN2302D datasheet, PDF - EEWORLD Datasheet

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SPN2302D: DescriptionTrench FET; CategoryDiscrete semiconductor; File Size203KB，8 Pages; ManufacturerSYNC POWER Crop.; Websitehttp://www.syncpower.com/; KINETICS Co., Ltd. is a professional analog IC design company. It was officially established on February 1, 2004 and moved into Taipei Nangang Software Park (NKSP). KINETICS products are mainly used in power management systems.

Integrating high-tech IC design talents from the United States and Taiwan, KINETICS Inc. is dedicated to the design and development of power management ICs. We also develop and design field-effect power devices such as Trench POWER MOSFET and TVS ESD protection devices to provide customers with more competitive power management system components and effectively protect the safety of electronic products.

KINETICS Technology Co., Ltd. holds several U.S. patents for synchronous rectification power management ICs. Based on these patented technologies, we continue to develop and design more forward-looking and high-performance power management ICs, and keep pace with world-class power management design companies.

QINGLI Technology uses high-density Trench POWER MOSFET process to design products, and adopts the industry's most advanced packaging and the most sophisticated packaging type, which is particularly suitable for handheld electronic product systems.

The TVS ESD protection components of QINGLI Technology are the most advanced packaging type and are adopted by many international system manufacturers. The fine packaging type is particularly suitable for electronic communication products, effectively and precisely protecting the system for safe use.

KINETICS Co., Ltd. provides closer customer service in a synchronous growth mode, allowing customers and KINETICS to achieve a win-win situation in terms of industrial technology and market competition.

In accordance with the provisions of the Recycling and Environmental Protection Act on banned substances, the company develops green products with pollution-free raw materials. The products are inspected and certified by the internationally renowned certification agency SGS and fully comply with the ROHS world environmental protection standards.

In September 2005, KINETIC TECHNOLOGY CO., LTD. passed the AFQA (ISO 9001: 2008) certification.

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SPN2302D Overview

Trench FET

Features

产品名称：溝槽式場效電晶體

Product model: SPN2302D

Product Description:

The SPN2302D is the N-Channel logic enhancement

mode power field effect transistors are produced using

high cell density, DMOS trench technology. This high

density process is especially tailored to minimize on-state

resistance. These devices are particularly suited for low

voltage application such as cellular phone and notebook

computer power management and other battery powered

circuits, and low in-line power loss are needed in a very

small outline surface mount package.

parameter:

TYPE：N

VDSS：20V

VGS：12V

VTH：min 0.45

Max 1.2

IDS: 3.2A at 25°C

RDS：97mΩ at 4.5V

113mΩ at 2.5V

PD：1.25W

Package: SOT-23

SPN2302D Preview

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SPN2302D

N-Channel Enhancement Mode MOSFET

DESCRIPTION

The SPN2302D is the N-Channel logic enhancement

mode power field effect transistors are produced using

high cell density, DMOS trench technology. This high

density process is especially tailored to minimize on-state

resistance. These devices are particularly suited for low

voltage application such as cellular phone and notebook

computer power management and other battery powered

circuits, and low in-line power loss are needed in a very

small outline surface mount package.

APPLICATIONS

Power Management in Note book

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

FEATURES

20V/3.6A,R

DS(ON)

= 97mΩ@V

=4.5V

20V/3.1A,R

DS(ON)

= 113mΩ@V

=2.5V

Super high density cell design for extremely low

DS (ON)

Exceptional on-resistance and maximum DC

current capability

SOT-23 package design

PIN CONFIGURATION(SOT-23)

PART MARKING

PIN DESCRIPTION

2010/07/28

Ver.1

Page 1

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