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SMD0603-010/15N

File Size2MB,5 Pages
ManufacturerBORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.
Websitehttp://www.born-tw.com/
BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.
Download Datasheet Parametric View All

SMD0603-010/15N Parametric

Parameter NameAttribute value
maximum voltage15V
Maximum current35A
holding current100mA
Trip current300mA
Power consumption500mW
Initial resistance (minimum value)900mΩ
Resistance after tripping (maximum value)
Maximum action time1s
Operating temperature-

SMD0603-010/15N Preview

Download Datasheet
SMD0603
Series
SMD0603 Polymer PTC
»
Performance Specification
Maximum
Model
Markin
g
V
max
(V dc)
I
max
(A)
20
20
20
20
20
20
20
20
35
35
35
35
35
35
35
35
35
35
35
35
35
35
I
hold
@25°C
I
trip
@25°C
P
d
Typ.
Time To Trip
Current
Time
Resistance
R i
min
R1max
(A)
0.01
0.02
0.02
0.03
0.03
0.04
0.05
0.05
0.10
0.10
0.20
0.20
0.25
0.25
0.35
0.40
0.50
0.50
0.60
0.65
0.75
1.00
(A)
0.03
0.06
0.06
0.09
0.09
0.12
0.15
0.15
0.30
0.30
0.50
0.50
0.55
0.55
0.75
0.80
1.00
1.00
1.20
1.30
1.40
2.00
(W)
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
(A)
0.2
0.2
0.2
0.2
0.2
0.20
0.25
0.25
0.5
0.5
1.0
1.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
(Sec)
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
0.60
0.60
0.08
0.08
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
()
15.000
12.000
12.000
6.000
6.000
4.000
3.800
3.800
0.900
0.900
0.550
0.550
0.500
0.500
0.200
0.150
0.100
0.100
0.080
0.070
0.060
0.050
()
100.000
70.000
70.000
50.000
50.000
40.000
30.000
30.000
6.000
6.000
3.500
3.500
3.000
3.000
1.000
0.900
0.800
0.800
0.600
0.550
0.450
0.300
SMD0603-001/60N
SMD0603-002/60N
SMD0603-002/09N
SMD0603-003/30N
SMD0603-003/09N
SMD0603-004/15N
SMD0603-005/15N
SMD0603-005/30N
SMD0603-010/15N
SMD0603-010/09N
SMD0603-020/09N
SMD0603-020/16N
SMD0603-025/09N
SMD0603-025/16N
SMD0603-035/06N
SMD0603-040/06N
SMD0603-050/06N
SMD0603-050/12N
SMD0603-060/06N
SMD0603-065/06N
SMD0603-075/06N
SMD0603-100/06N
X
Y
Y
Z
Z
-
-
-
1
1
2
2
2
2
3
5
5
5
7
7
7
0
60
60
9
30
9
15.0
15.0
30.0
15.0
9.0
9.0
16.0
9.0
16.0
6.0
6.0
6.0
12.0
6.0
6.0
6.0
6.0
V max = Maximum operating voltage device can withstand without damage at rated current (Imax).
I max
I hold
I trip
Pd
= Maximum fault current device can withstand without damage at rated voltage (V max).
= Hold Current. Maximum current device will not trip in 25°C still air.
= Trip Current. Minimum current at which the device will always trip in 25°C still air.
= Power dissipation when device is in the tripped state in 25°C still air environment at rated voltage.
Ri min/max = Minimum/Maximum device resistance prior to tripping at 25°C.
R1max = Maximum device resistance is measured one hour post reflow.
CAUTION : Operation beyond the specified ratings may result in damage and possible arcing and flame.
»
Environmental Specifications
Test
Passive aging
Humidity aging
Thermal shock
Resistance to solvent
Vibration
Ambient operating conditions : - 40 °C to +85 °C
Maximum surface temperature of the device in the tripped state is 125 °C
Revision 2018
Conditions
+85°C, 1000 hrs.
+85°C, 85% R.H. , 168 hours
+85°C to -40°C, 20 times
MIL-STD-202,Method 215
MIL-STD-202,Method 201
Resistance change
±5% typical
±5% typical
±33% typical
No change
No change
www.born-tw.com
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