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SL2301S

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.4A Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 140mΩ @ 2.4A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 900mW Type: P-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,3 Pages
ManufacturerShenzhen SLKOR Micro Semicon Co., Ltd.
Websitehttp://www.slkormicro.com/

Shenzhen SlkorMicro Semicon Co., Ltd. is dedicated to the 3rd-generation semiconductor SiC power devices. Our products cover discrete devices and ICs, diodes, transistors, power devices, and power management chips. Our brand "Slkor" is gaining reputations in the semiconductor industry. We offer varieties of products ranging from industrial to military applications, SiC diodes, SiC MOSFET, IGBT, the 5th generation ultra-fast recovery power diodes, and more. These products are vitally applied in electric vehicles, high-end equipment, communication equipment, and more.

Download Datasheet Parametric View All

SL2301S Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.4A Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 140mΩ @ 2.4A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 900mW Type: P-channel

SL2301S Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C2.4A
Gate-source threshold voltage1.5V @ 250uA
Drain-source on-resistance140mΩ @ 2.4A,4.5V
Maximum power dissipation (Ta=25°C)900mW
typeP channel

SL2301S Preview

Download Datasheet
SL2301S
P-Channel
Power MOSFET
D
General Features
V
DS
= -20V,I
D
= -2.4A
R
DS(ON)
< 200m @ V
GS
=-2.5V
R
DS(ON)
< 140mΩ@ V
GS
=-4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
S
G
Schematic diagram
Application
PWM applications
Load switch
Power management
Marking and Pin Assignment
SOT-23 top view
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage
Gate- Source Voltage
Drain Current (continuous)
Drain Current (pulsed)
Total Device Dissipation
T
A
=
25℃
Junction
Storage Temperature
www.slkormicro.com
Symbol
BV
DSS
V
GS
I
D
I
DM
Max
-20
+8
-2.4
-10
Unit
V
V
A
A
P
D
900
mW
T
J
T
stg
150
-55to+150
1
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