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SL21N65CF

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 21A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 180mΩ @ 10.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 33.8W(Tc) Type: N-channel CoolMos 650V Rds: 150mΩ
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size747KB,8 Pages
ManufacturerShenzhen SLKOR Micro Semicon Co., Ltd.
Websitehttp://www.slkormicro.com/

Shenzhen SlkorMicro Semicon Co., Ltd. is dedicated to the 3rd-generation semiconductor SiC power devices. Our products cover discrete devices and ICs, diodes, transistors, power devices, and power management chips. Our brand "Slkor" is gaining reputations in the semiconductor industry. We offer varieties of products ranging from industrial to military applications, SiC diodes, SiC MOSFET, IGBT, the 5th generation ultra-fast recovery power diodes, and more. These products are vitally applied in electric vehicles, high-end equipment, communication equipment, and more.

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SL21N65CF Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 21A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 180mΩ @ 10.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 33.8W(Tc) Type: N-channel CoolMos 650V Rds: 150mΩ

SL21N65CF Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C21A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance180mΩ @ 10.5A,10V
Maximum power dissipation (Ta=25°C)33.8W(Tc)
typeN channel

SL21N65CF Preview

Download Datasheet
SL21N65C
N-Channel
Super Junction Power MOSFET
Features
●New
technology for high voltage device
●Low
on-resistance and low conduction losses
●Small
package
●Ultra
Low Gate Charge cause lower driving requirements
●100%
Avalanche Tested
●ROHS
compliant
V
DS
R
DS(ON) MAX
I
D
650
180
21
V
A
Application
Power factor correction(PFC)
Switched mode power supplies(SMPS)
Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
TO-263
TO-220
TO-220F
Marking
SL21N65CK
SL21N65C
SL21N65CF
SL21N65CK
SL21N65C
SL21N65CF
TO-263
Table 1.
Absolute Maximum Ratings (T
C
=25℃)
Parameter
Drain-Source Voltage (
V
GS=
0V)
Gate-Source Voltage (
V
DS=
0V),
AC (f>1 Hz)
Continuous Drain Current
Continuous Drain Current
Pulsed drain current
at T
C
=25°C
at T
C
=100°C
TO-220
TO-220F
Symbol
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
P
D
E
AS
I
AR
E
AR
SL21N65CK
SL21N65C
650
±30
21
13.2
84
188
1.5
441
10.5
0.7
SL21N65CF
Unit
V
V
21*
13.2*
84*
33.8
0.27
A
A
A
W
W/
°C
(Note 1)
Maximum Power Dissipation(T
C
=25
℃)
Derate above 25
°C
(Note 2)
Single pulse avalanche energy
Avalanche current
(Note 1)
(Note 1)
mJ
A
Repetitive Avalanche energy
,t
AR
limited by T
Jmax
mJ
www.slkormicro.com
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