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SF28 编带

Description
Reverse recovery time (trr): 35ns DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.7V @ 2A
CategoryDiscrete semiconductor    Super fast recovery diode   
File Size532KB,2 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
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SF28 编带 Overview

Reverse recovery time (trr): 35ns DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.7V @ 2A

SF28 编带 Parametric

Parameter NameAttribute value
Reverse recovery time (trr)35ns
DC reverse withstand voltage (Vr)600V
Average rectified current (Io)2A
Forward voltage drop (Vf)1.7V @ 2A

SF28 编带 Preview

Download Datasheet
SF21 THRU SF28
SUPER FAST RECTIFIER
Reverse Voltage - 50 to 600 Volts
DO-15
Forward Current - 2.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Super fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guarantteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.140(3.6)
0.104(2.6)
DIA.
0.300(7.6)
0.230(5.8)
MECHANICAL DATA
1.0 (25.4)
MIN.
0.034(0.86)
0.028(0.70)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-15 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.014
ounce, 0.40 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375
”(9.5mm)
lead length at T
A
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
SF21
SF22
SF23
SF24
SF25
SF26
SF28
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
2.0
300
210
300
400
280
400
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
,
T
STG
60.0
0.95
50.0
1.25
5.0
50.0
35
30.0
50.0
-65 to +150
1.7
Amps
Volts
µ
A
ns
pF
C/W
C
Note:
1.Reverse recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375
”(9.5mm)lead
length,P.C.B. mounted
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