SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SEC144EU
100mA / 50V Digital transistors
Features
●
Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input
resistors (see equivalent circuit).
●Each
bias resistor is a thin-film resistor. Since they
are completely insulated, the input can be negatively
biased. The insulation also eliminates most of the
parasitic effects.
●
Only the on / off conditions need to be set for
operation, making the device design easy.
Revision:A
Applications
●
Inverter, Interface, Driver
Construction
●
NPN epitaxial planar silicon transistor (Resistor
built-in type)
Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Limits
50
-10 to +30
100
100
150
150
-55 to +150
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
V
CC
V
IN
I
O
I
C(MAX)
P
D
T
J
T
stg
V
V
mA
mW
℃
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note
2)
R
θJA
625
℃/W
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Conditions
Min..
0.3
Typ.
-
Max.
-
Unit
V
I(off)
Input voltage
V
I(on)
VO(on)
V
CC
=5V,
I
O
=100υA
V
O
=0.3V,
I
O
=20mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
V
V
mA
-
-
-
-
0.1
-
3
0.3
7.2
Output voltage
Input current
I
I
SEC144EU
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
I
O(off)
G
I
R
1
R
2/
R
1
f
T
-
V
CE
=10V,
I
E
=−5mA,
f=100MHz
V
CC
=50V,
V
I
=0V
V
O
=5V,
I
O
=5mA
-
30
32
0.8
-
-
-
47
1
250
0.5
-
61
1.2
-
μA
-
KΩ
-
MHz
*Characteristics of built-in transistor
TYPICAL CURVES
ShangHai Sino-IC Microelectronics Co., Ltd.
2.
SEC144EU
SOT-323 PACKAGE OUTLINE DIMENSIONS
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© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
3.