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SEB160V-40

Description
DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 1A Forward voltage drop (Vf): 510mV @ 1A
CategoryDiscrete semiconductor    Schottky diode   
File Size181KB,3 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SEB160V-40 Overview

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 1A Forward voltage drop (Vf): 510mV @ 1A

SEB160V-40 Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)40V
Average rectified current (Io)1A
Forward voltage drop (Vf)510mV @ 1A

SEB160V-40 Preview

Download Datasheet
SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SEB160V-40
Revision:A
Schottky barrier diode
Features
Small power mold type. (PMDS)
Low I
R
High reliability
Applications
General rectification
Construction
Silicon epitaxial planer
Absolute maximum ratings (Ta=25℃)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
Junction temperature
Storage temperature
(*1)Mounted on epoxy board. 180°Half sine wave
Symbol
V
RM
V
R
Limits
40
Unit
V
V
A
A
40
1
30
150
-40
½
+150
I
O
T
FSM
T
j
T
stg
Electrical characteristics (Ta=25℃)
Parameter
Forward voltage
Reverse current
Symbol
V
F1
I
R
Min.
Typ.
0.46
4.0
Max.
0.51
30
Unit
V
uA
Conditions
I
F
=1.0A
V
R
=40V
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