SE7401P datasheet, PDF - EEWORLD Datasheet

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SE7401P: DescriptionMOS tube field effect tube 20V P channel; CategoryDiscrete semiconductor; File Size494KB，6 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SE7401P Overview

MOS tube field effect tube 20V P channel

Features

Product Name: MOS Field Effect Tube 20V P Channel

Product model: SE7401P

Product Description:

The MOSFETs from SINO-IC provide the best combination of fast switching, low on-resistance and cost-effectiveness.

Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM

Simple Drive Requirement

Small Package Outline

Surface Mount Device

Pb-Free package is available

product features:

For a single mosfet

VDS = -20 V

RDS(ON) = 120mΩ. @ VGS=-4.50V @Ids=-2.0A

RDS(ON) = 150mΩ. @ VGS=-2.50V @Ids=-1.8A

RDS(ON) = 170mΩ. @ VGS=-1.80V @Ids=-1.8A

Package: SOT-363

SE7401P Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	20V
Continuous drain current (Id) at 25°C	2.2A
Gate-source threshold voltage	900mV @ 250uA
Drain-source on-resistance	120mΩ @ 2A,4.5V
Maximum power dissipation (Ta=25°C)	900mW
type	P channel

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SHANGHAI

MICROELECTRONICS CO., LTD.

July 2009

SE7401P

20V P-Channel Enhancement-Mode MOSFET

Revision:B

General Description

The MOSFETs from SINO-IC provide

the best combination of fast switching, low

on-resistance and cost-effectiveness.

General Description

Thigh Density Cell Design For Ultra Low

On-Resistance Fully Characterized Avalanche

Voltage and Current Improved Shoot-Through

FOM

Simple Drive Requirement

Small Package Outline

Surface Mount Device

Pb-Free package is available

Features

For a single mosfet

= -20 V

DS(ON)

= 120mΩ @ V

=-4.50V @Ids=-2.0A

DS(ON)

= 150mΩ @ V

=-2.50V @Ids=-1.8A

DS(ON)

= 170mΩ @ V

=-1.80V @Ids=-1.8A

Pin configurations

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

Rating

-20

±8

-2.2

-7

0.9

0.57

-55 to 150

°C

Units

Drain Current (Note 1)

Total Power Dissipation

Continuous

Pulsed

=25°C

=75°C

Operating Junction Temperature Range

ShangHai Sino-IC Microelectronics Co., Ltd.

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