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SE10015

Description
Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 15A Gate-source threshold voltage: 1V @ 250uA (min) Drain-source on-resistance: 80mΩ @ 15A, 10V Maximum power dissipation (Ta=25°C): 50W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size400KB,6 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SE10015 Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 15A Gate-source threshold voltage: 1V @ 250uA (min) Drain-source on-resistance: 80mΩ @ 15A, 10V Maximum power dissipation (Ta=25°C): 50W Type: N-channel

SE10015 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C15A
Gate-source threshold voltage1V @ 250uA (minimum)
Drain-source on-resistance80mΩ @ 15A,10V
Maximum power dissipation (Ta=25°C)50W
typeN channel

SE10015 Preview

Download Datasheet
SE10015
N-Channel MOSFET
Revision: A
General Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and
low operation voltage. This device is
suitable for using as a load switch or in
PWM applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Pin configurations
See Diagram below
D
S
S
S
G
D
D
D
D
G
S
Features
For a single MOSFET
V
DS
= 100V
R
DS(ON)
= 67mΩ @ V
GS
=10V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
@TA=25℃
Symbol
V
DS
V
GS
I
D
P
D
T
J
Rating
100
±20
15
60
50
-55 to 150
Units
V
V
A
W
Operating Junction Temperature Range
Thermal Resistance
Symbol
R
θJC
Parameter
Thermal Resistance, Junction to Case
Min
Typ
25
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
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