Silan
Semiconductors
ABSOLUTE MAXIMUM RATINGS
(Tamb=25°C, All voltage referenced to Vss, unless otherwise specified)
SC9102C/D
Symbol
V
DD
V
IN
P
D
Topr
Tstg
Characteristic
Power Supply Voltage
Input Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Value
6.0
-0.3~V
DD
+0.3
500
-25~+70
-55~+150
Unit
V
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(Tamb=25°C , V
DD
=2.5V, fosc=3.579545MHz, unless otherwise specified)
Parameter
Symbo
l
V
DD
Conditions
Tone/Pulse
Memory retension
Tone
Pulse, OFF-HOOK, Keypad
entry, no load
ON-HOOK No keypad
entry ,no load V
DD
=1.0V
Min
2.0
1.0
Typ
Max
5.5
5.5
Unit
Operating Voltage
V
0.6
0.2
0.1
0.1
VSS
0.7V
DD
2
0.6
5
0.1
0.3V
DD
V
DD
1
mA
Operating Current
I
OP
Standby Current
Memory Retension Current
Control Pin Input Low Voltage
Control Pin Input High Voltage
XMUTE
Pin Leakage Current
XMUTE Pin Sink Current
HKS
Pin Input Current
I
S
Imr
Vil
Vih
Imth
Imtl
Ihks
Ikbd
Ikbs
t
DB
Ipoh
Ipol
fpr
t
M
t
B
µA
µA
V
µA
mA
µA
µA
ms
V
XMUTE
=12.0V
V
XMUTE
=0.5V
Vhks=2.5V
Vn=0V note1
Vn=2.5 note1
4
200
10
400
20
Vpo=12V
Vpo=0.5V
--
1. 0
--
--
--
--
--
3.0
10
20
40:60
33:66
1
0.1
30
Keyboard
Scanning Pin
Pulse Mode
Drive Current
Sink Current
Key-in Debounce Time
Pulse Output Pin Leakage Current
Pulse Output Pin Sink Current
Pulse Rate
Make/Break Ratio
1.0
--
--
--
--
--
µA
mA
pps
%
(to be continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
2001-11-02
3
Silan
Semiconductors
(continued)
SC9102C/D
Conditions
M/B ratio=40:60
M/B ratio=33:66
M/B ratio=40:60
M/B ratio =33:66
Pulse rate=10pps
Pulse rate=20pps
V
DD
=2.0V~5.5V
Vdtmf=0.5V
Row group R
L
=10KΩ
Dist.<=-23dB
V
DD
=2.0~5.5 V
R
L
=10KΩ
Auto redial
Auto redial
Parameter
Pre-digit Pause
Pulse rate=10pps
Pre-digit Pause
Pulse rate=20pps
Inter-digit Pause
Tone Mode
DC Level
Tone
Output Pin
Sink Current
AC level
Load Resistor
DTMF Signal
Pre-emphasis
Distortion(note 2)
Symbol
t
PDP
t
PDP
t
IDP
Min
--
--
--
--
--
--
0.45V
DD
0.15
120
10
1
--
--
--
Typ
40
33
20
16.5
800
600
0.55V
DD
--
150
--
2
-30
100
106
Max
--
--
--
--
--
--
0.7V
DD
--
180
--
3
-23
--
--
Unit
ms
ms
ms
Vdc
Itl
Vdtmf
R1
twist
Dist.
t
TD
t
TTP
V
mA
mVrms
KΩ
dB
dB
ms
ms
Minimum tone duration Time
Minimum Intertone Pause Time
Note: 1. Vn: Input voltage of any keyboard scanning pin (Row group, Column group)
2 Distortion (dB) = 20log{[V
12
+V
22
+V
32
+…Vn
2
)
1/2
]/[(V
L2
+V
H2
)
1/2
]}
V
L
,V
H
: Row group and Column group signal
V1 V2…
Vn: Harmonic signal (BW = 300Hz~3500Hz
ACTUAL FREQUENCY OUTPUT
(fosc=3.579545MHz)
Keyboard Scanning Pin
R1
R2
R3
R4
C1
C2
C3
f1
f2
f3
f4
f5
f6
f7
Standard(Hz)
697
770
852
941
1209
1336
1477
Output
699
766
848
948
1216
1332
1472
Deviation(%)
+0.28
-0.52
-0.47
+0.74
+0.57
-0.30
-0.34
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
2001-11-02
4
Silan
Semiconductors
PIN DESCRIPTION
Pin No.
15
SC9102C/D
Description
Pin Name
C1
*Provides keyboard scanning.
*
HKS
pin is LOW, the column group stays in “HIGH” and row group stays in “LOW”
state.
*The keypad is compatible with the standard dual contact matrix keyboard (as
figure1b), the inexpensive single contact keyboard (as figure 1a), and electronic input
(as figure 1c).
*When
HKS
is “LOW”, a valid key entry is defined by related Row & Column
16
C2
17
C3
connection or by electronic input.
*Activation of two or more keys will result in no response, except for single key.
*To avoid keyboard-bouncing error, this chip provides built-in debounce circuit. (The
18
C4
debounce time = 20ms)
1
R1
Row
Column
Row
Column
Figure1a: Single contact form
keyboard configuration
Figure1b: Dual contact form
keyboard configuration
2
R2
Row
3
V
DD
V
SS
R3
Column
4
V
DD
V
SS
R4
Figure1c: Electronic signal input keyboard configuration
*Oscillator input & output pins.
8
OSCI
*The 3.579545MHz oscillator is formed by a built-in inverter inside of this chip and by
connecting a 3.579545MHz crystal or a ceramic resonator across the OSCI and
OSCO pins. (built-in feedback resistor and capacitor)
*When
HKS
is “LOW”, a valid key-in may turn on this oscillator and generates a
3.579545 MHz clock.
(to be continued)
9
OSCO
HANGZHOU SILAN MICROELECTRONICS CO.,LTD.
Rev: 2.0
2001-11-02
5