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SBM1060L

Description
Product Status:Active, Type(V):Standard, VRRM Max.(A):60, IF(A):10, IFSM(V):150, VF Max.(A):0.57, @IF(µA):10, IR Max.(V):220, @VR:60
CategoryDiscrete semiconductor    diode   
File Size244KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SBM1060L Overview

Product Status:Active, Type(V):Standard, VRRM Max.(A):60, IF(A):10, IFSM(V):150, VF Max.(A):0.57, @IF(µA):10, IR Max.(V):220, @VR:60

SBM1060L Preview

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PSBM1060L
ULTRA LOW VF SCHOTTKY RECTIFIER
Voltage
Features
Ultra low forward voltage drop, low power loss
High efficiency operation
Lead free in compliance with EU RoHS 2011/65/EU directive.
60 V
Current
10 A
Mechanical Data
Case: Molded plastic, TO-220AC
Terminals: Axial leads,solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0067 ounces, 1.89 grams
Marking: Part number
Maximum Ratings
(T
A
=25 C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Storage temperature range
Maximum average forward rectified current
Peak forward surge current : 8.3ms single half sine-
wave superimposed on rated load
Typical junction capacitance (V
R
=4V, f=1MHz)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
(Note 1)
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
C
J
R
JC
T
J
T
STG
LIMIT
60
42
60
10
150
480
3.5
-55 to +150
-55 to +150
o
o
UNIT
V
V
V
A
A
pF
C/W
o
o
C
C
Note : 1. The Device mounted on a infinite heatsink , then measured the center of the marking side.
October 14,2014-REV.00
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